Page 1
Elektronische Bauelemente
FEATURES
z Complementary to 2SC1623K
z High DC Current Gain: h
z High Voltage: V
CEO
PACKAGE DIMENSIONS
ABSOLUTE MAXIMUM
= -50V
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
= 200 TYP. (VCE = -6V, IC = -1mA)
FE
1
Base
Top View
1
2
Emitter
A
L
3
2
GV
2SA812K
-50 V, -100 mA
PNP Epitaxial Planar Transistor
Collector
3
K
S
B
D
J
C
H
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
RATINGS at Ta = 25°C
Parameter Symbol Ratings Unit
Collector to Base Voltage V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Currrent IC -100
Total Power Dissipation Pc 200 mW
Junction, Storage Temperature TJ, T
-60 V
CBO
-50 V
CEO
-5 V
EBO
+150, -55 ~ +150 ℃
STG
CHARACTERISTICS at Ta = 25°C
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO -60 - - V IC=-100uA
BVCEO -50 - - V IC=-1mA
BVEBO -5 - - V IE=-100uA
I
- - -100 nA VCB=-60V
CBO
I
- - -100 nA VEB=-5V
EBO
*V
- - 300 mV IC=100mA, IB=10mA
CE(sat)
VBE -0.58 - -0.68 V IC = -1mA, VCE = -6V
hFE 90 - 600 VCE=-6V, IC=-1mA
fT - 180 - MHz VCE=-6V, IC=-10mA
Cob - 4.5 - pF VCB = -10V, f = 1 MHz
CLASSIFICATION OF hFE
Rank P Y G B
Range 90 - 180 135 - 270 200 - 400 300 - 600
Marking M4 M5 M6 M7
mA
01-June-2002 Rev. A Page 1 of 2
Page 2
Elektronische Bauelemente
CHARACTERISTIC CURVES
2SA812K
PNP Epitaxial Planar Transistor
-50 V, -100 mA
01-June-2002 Rev. A Page 2 of 2
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