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INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistor 2SA795
DESCRIPTION
·Large Collector Power Dissipation
·High Collector-Emitter Breakdown Voltage-
: V
(BR)CEO
·Good Linearity of h
·Complement to Type 2SC1565
APPLICATIONS
·Medium Power amplifier applications
ABSOLUTE MAXIMUM RATINGS(T
= -150V(Min)
FE
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
T
CBO
CEO
EBO
I
C
CP
C
T
J
stg
Collector-Base Voltage -150 V
Collector-Emitter Voltage -150 V
Emitter-Base Voltage -5 V
Collector Current-Continuous -1 A
Collector Current-Pulse -1.5 A
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150
Storage Temperature Range -55~150
10 W
℃
℃
isc Website：www.iscsemi.cn
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INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistor 2SA795
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CE
V
BE
I
I
h
h
C
h
Collector-Emitter Breakdown Voltage IC= -0.1A ; IB= 0 -150 V
Emitter-Base Breakdown Vltage IE= -1mA ; IC= 0 -5 V
Collector-Emitter Saturation Voltage IC= -300mA; IB= -30mA -1.5 V
Base-Emitter Saturation Voltage IC= -300mA; IB= -30mA -1.5 V
Collector Cutoff Current VCB= -100V; IE= 0 -1 μA
Emitter Cutoff Current VEB= -4V; IC= 0 -1 μA
DC Current Gain IC= -150mA ; VCE= -10V 65 330
DC Current Gain IC=-500mA ; VCE= -5V 50
Current-Gain—Bandwidth Product IC= -50mA ; VCE= -10V 120 MHz
Output Capacitance
Classifications
CBO
EBO
FE-1
FE-2
f
T
OB
(sat)
(sat)
FE-1
I
=0 ; VCB= -100V,f
E
= 1MHz
test
15 pF
P Q R S
65-110 90-155 130-220 185-330
isc Website：www.iscsemi.cn
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