Page 1
INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistor 2SA758
DESCRIPTION
·High Power Dissipation: P
= 80W(Max.)@TC=25℃
C
·Collector-Emitter Breakdown Voltage: V
(BR)CEO
·Complement to Type 2SC898
APPLICATIONS
·Designed for use in audio amplifier power output stage and
general purpose applications.
ABSOLUTE MAXIMUM RATINGS(T
= -110V(Min.)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector Current-Continuous -7 A
ICM Collector Current-Peak -12 A
PC
Tj Junction Temperature 150 ℃
T
stg
Collector-Base Voltage -130 V
Collector-Emitter Voltage -110 V
Emitter-Base Voltage -5 V
Collector Power Dissipation
@TC=25℃
Storage Temperature -55~150 ℃
80 W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistor 2SA758
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
I
V
(BR)CEO
Collector-Emitter Breakdown Voltage
= -50mA; RBE= ∞
C
-110 V
V
(BR)CBO
V
(BR)EBO
V
CE
V
BE
I
CBO
h
FE-1
h
FE-2
(sat)
(on)
Collector-Base Breakdown Voltage IC= -5mA; IE= 0 -130 V
Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 -5 V
Collector-Emitter Saturation Voltage I
Base-Emitter On Voltage I
= -5A; IB= -1A -1.8 V
C
= -1A; VCE= -5V -1.5 V
C
Collector Cutoff Current VCB= -30V; IE= 0 -1.0 mA
DC Current Gain IC= -1A; VCE= -5V 25 200
DC Current Gain IC= -5A; VCE= -5V 20
fT Current-Gain—Bandwidth Product IC= -1A; VCE= -5V 20 MHz
h
Classifications
FE-1
A B C
25-60 50-120 100-200
isc Website：www.iscsemi.cn
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