Page 1
INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistor 2SA745
DESCRIPTION
·High Power Dissipation: PC= 70W(Max.)@T
·Collector-Emitter Breakdown Voltage: V
(BR)CEO
·Complement to Type 2SC1403
APPLICATIONS
·Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(T
=25℃
C
= -100V(Min.)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
CBO
V
CEO
V
EBO
I
C
I
B
P
T
T
stg
Collector-Base Voltage -100 V
Collector-Emitter Voltage -100 V
Emitter-Base Voltage -6 V
Collector Current-Continuous -8 A
B Base Current-Continuous -3 A
Collector Power Dissipation
C
j
=25℃
@T
C
Junction Temperature 150
Storage Temperature -65~150
70 W
℃
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistor 2SA745
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CE
I
CBO
I
EBO
h
(sat)
FE
f
T
Collector-Emitter Breakdown Voltage IC= -50mA ;IB= 0 B -100 V
Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A B -1.5 V
Collector Cutoff Current VCB= -100V; IE= 0 -1.0 mA
Emitter Cutoff Current VEB= -6V; IC= 0 -1.0 mA
DC Current Gain IC= -3A ; VCE= -4V 30
Current-Gain—Bandwidth Product IE= 0.5A ; VCE= -12V 15 MHz
Switching times
t
r
t
stg
Rise Time 1.2
Storage Time 2.0
I
= -3A ,RL= 4Ω, VCC= -12V
C
= -0.2A; IB2= 0.1A
I
B1
μs
μs
t
f
Fall Time
isc Website：www.iscsemi.cn
μs
0.55
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