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INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistor 2SA740
DESCRIPTION
·Collector-Emitter Breakdown Voltage
: V
·DC Current Gain
: h
FE
·Complement to Type 2SC1448
APPLICATIONS
·Power amplifier applications.
·Vertical output applications.
ABSOLUTE MAXIMUM RATINGS(T
= -150V(Min)
(BR)CEO
= 40-140@ IC= -0.5A
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
P
T
CBO
CEO
EBO
I
C
I
E
T
stg
Collector-Base Voltage -150 V
Collector-Emitter Voltage -150 V
Emitter-Base Voltage -5 V
Collector Current-Continuous -1.5 A
Emitter Current-Continuous 1.5 A
Total Power Dissipation
@ T
=25℃
C
J
a
Total Power Dissipation
=25℃
@ T
C
Junction Temperature 150
Storage Temperature Range -55~150
1.5
W
25
℃
℃
isc Website：www.iscsemi.cn
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INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistor 2SA740
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE
(sat)
V
BE
I
CBO
I
EBO
h
FE
C
OB
f
T
(on)
Collector-Emitter Breakdown Voltage IC= -5mA ; IB= 0 -150 V
Collector-Base Breakdown Voltage IC= -1mA ; IE= 0 -150 V
Emitter-Base Breakdown Voltage IE= -1mA ; IC= 0 -5 V
Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA B -1.5 V
Base-Emitter On Voltage IC= -0.5A ; VCE= -10V -1.0 V
Collector Cutoff Current VCB= -100V ; IE= 0 -20 μA
Emitter Cutoff Current VEB= -5V; IC= 0 -10 μA
DC Current Gain IC= -0.5A ; VCE= -10V 40 140
Output Capacitance
I
= -0; VCB= -10V; f
E
= 1MHz
test
90 pF
Current-Gain—Bandwidth Product IC= -0.5A;VCE= -10V 8 MHz
isc Website：www.iscsemi.cn
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