
Collector to Base Breakdown
FEATURES
Low frequency amplifier
Complementary pair with 2SC1213 and 2SC1213A
Elektronische Bauelemente
A suffix of “-C” specifies halogen and lead free
RoHS Compliant Product
2SA673, 2SA673A
PNP
General Purpose Transistor
TO-92
2
2Collector
22
3
3Base
33
CLASSIFICATION OF h
Product-Rank
Product-Rank
Range
2SA673-B 2SA673-C 2SA673-D
2SA673A-B 2SA673A-C 2SA673A-D
60~120 100~200 160~320
FE(1)
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage V
Continuous Collector Current IC -500 mA
Collector Power Dissipation PC 400 mW
Junction, Storage Temperature TJ, T
2SA673 -35
2SA673A
2SA673 -35
2SA673A
(TA = 25°C unless otherwise specified)
Rating Unit
V
CBO
V
CEO
-4 V
EBO
150, -55~150 °C
STG
-50
-50
Collector
REF.
Min. Max.
A 4.40 4.70
B 4.30 4.70
C 12.70 D 3.30 3.81
E 0.36 0.56
F 0.36 0.51
G 1.27 TYP.
H 1.10 J 2.42 2.66
K 0.36 0.76
V
V
ELECTRICAL CHARACTERISTICS
Parameter Symbol Min. Typ. Max.
2SA673 -35 - -
Voltage
Breakdown Voltage
Emitter to Base Breakdown Voltage V
Collector Cut - Off Current I
DC Current Gain
Collector to Emitter Saturation Voltage V
Collector to Emitter Voltage VBE - -0.64 - V VCE= -3V, IC= -10mA
* Pulse test: pulse width ≤300µs, duty cycle≤ 2.0%.
2SA673A
2SA673 -35 - - Collector to Emitter
2SA673A
(TA = 25°C unless otherwise specified)
Unit Test Conditions
V
(BR)CBO
V
(BR)CEO
(BR)EBO
- - -0.5 µA VCB= -20V, IE=0
CBO
h
60 - 320 VCE= -3V, IC=- 10mA
FE (1)
h
* 10 - - VCE= -3V, IC= -500mA
FE (2)
* - - -0.6 V IC = -150mA, IB= -15mA
CE(sat)
-50 - -
-50 - -
-4 - - V IE= -10µA, IC=0
V IC= -10µA, IE=0
V IC= -1mA, IB=0
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
21-Jan-2011 Rev. C Page 1 of 2

Elektronische Bauelemente
CHARACTERISTIC CURVES
2SA673, 2SA673A
General Purpose Transistor
PNP
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
21-Jan-2011 Rev. C Page 2 of 2