Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA670
DESCRIPTION
·With TO-220 package
·Low collector saturation voltage
APPLICATIONS
·Inverters;converters
·Power amplification
·Switching regulator ,driver
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
V
V
P
CBO
CEO
EBO
I
C
C
T
j
Collector-base voltage Open emitter -50 V
Collector-emitter voltage Open base -50 V
Emitter-base voltage Open collector -5 V
Collector current -3 A
Collector power dissipation TC=25℃ 25 W
Junction temperature 150 ℃
℃)
T
stg
Storage temperature -55~150 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA670
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
I
CBO
I
EBO
h
FE
f
Collector-emitter breakdown voltage IC=-25mA ,IB=0 -50 V
Collector-base breakdown voltage IC=-1mA; IE=0 -50 V
Emitter-base breakdown voltage IE=-1mA; IC=0 -5 V
Collector-emitter saturation voltage IC=-2A; IB=-0.2A -1.0 V
Collector cut-off current VCB=-50V; IE=0 -100
Emitter cut-off current VEB=-5V; IC=0 -100
μA
μA
DC current gain IC=-1A ; VCE=-4V 35 200
T
Transition frequency IC=-0.5A ; VCE=-10V 15 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA670
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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