Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA633
DESCRIPTION
·With TO-202 package
·High current capability
APPLICATIONS
·Power amplifier applications
PINNING(see Fig.2)
PIN DESCRIPTION
1
Base
2 Collector
3 Emitter
Fig.1 simplified outline (TO-202) and symbol
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B Base current -0.6 A
B
Collector-base voltage Open emitter -30 V
Collector-emitter voltage Open base -30 V
Emitter-base voltage Open collector -5 V
Collector current -2 A
Collector current-peak -3 A
℃)
T
P
C
T
j
T
stg
Collector power dissipation
Junction temperature 150
Storage temperature -55~150
=25℃
C
10 W
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA633
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
CEO
I
EBO
h
h
FE-1
FE-2
f
T
Collector-emitter breakdown voltage IC=-10mA; IB=0 -30 V
Emitter-base breakdown voltage IE=-0.1mA; IC=0 -5 V
Collector-emitter saturation voltage IC=-1.5A ;IB=-0.15A -1.0 V
Base-emitter saturation voltage IC=-2A ;IB=-0.2 A B -1.5 V
Collector cut-off current VCB=-20V; IE=0 -1
Collector cut-off current VCE=-12V; IB=0 -100
Emitter cut-off current VEB=-3V; IC=0 -1
μA
μA
μA
DC current gain IC=-20mA ; VCE=-5V 20
DC current gain IC=-1A ; VCE=-5V 80 250
Transition frequency IC=-0.1A ; VCE=-5V 60 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA633
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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