Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon PNP Power Transistor 2SA614
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
(BR)CEO
·Collector-Emitter Saturation Voltage : V
CE(sat)
·Collector Power Dissipation : P
= 25W@ TC= 25℃
C
APPLICATIONS
·Designed for medium power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25
= -55V (Min.)
= -0.5V (Max.)@ IC= -1A
℃)
SYMBOL PARAMETER VALUE UNIT
V
V
V
P
T
CBO
CEO
EBO
I
C
C
T
J
stg
Collector-Base Voltage -80 V
Collector-Emitter Voltage -55 V
Emitter-Base Voltage -5 V
Collector Current-Continuous -3 A
Collector Power Dissipation 25 W
Junction Temperature 150 ℃
Storage Temperature Range -55~150 ℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon PNP Power Transistor 2SA614
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE(
sat
I
CBO
I
EBO
h
FE
Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 -55 V
Collector-Base Breakdown Voltage IC= -500μA; IE= 0 -80 V
Emitter-Base Breakdown Voltage IE= -500μA; IC= 0 -5 V
Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A B -0.5 V
)
Collector Cutoff Current VCB= -80V; IE= 0 -50 μA
Emitter Cutoff Current VEB= -5; IC= 0 -50 μA
DC Current Gain IC= -0.5A; VCE= -5V 40 240
h
Classifications
FE
R O Y
40-80 70-140 120-240
isc Website：www.iscsemi.cn
2
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