Page 1
INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistor 2SA490
DESCRIPTION
·High Collector Current:: IC= -3A
·Collector-Emitter Breakdown Voltage
: V
(BR)CEO
·Complement to Type 2SC790
APPLICATIONS
·10 Watts output applications
·Power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
= -40V(Min)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
P
T
CBO
CEO
EBO
I
C
I
E
T
stg
Collector-Base Voltage -50 V
Collector-Emitter Voltage -40 V
Emitter-Base Voltage -5 V
Collector Current-Continuous -3 A
Emitter Current-Continuous 3 A
Total Power Dissipation
C
J
=25℃
@ T
C
Junction Temperature 150
Storage Temperature Range -55~150
25 W
℃
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistor 2SA490
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CE
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
C
(sat)
f
T
OB
(on)
Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 -40 V
Emitter-Base Breakdown Voltage IE= -10mA ; IC= 0 -5 V
Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A B -1.2 V
Base-Emitter On Voltage IC= -2A ; VCE= -2V -1.8 V
Collector Cutoff Current VCB= -30V ; IE= 0 -10
Emitter Cutoff Current VEB= -5V; IC= 0 -100
μA
μA
DC Current Gain IC= -0.5A ; VCE= -2V 40 240
DC Current Gain IC= -2A ; VCE= -2V 13
Current-Gain—Bandwidth Product IC= -0.5A ; VCE= -2V 3 MHz
Output Capacitance
= 0; VCB= -10V; f
I
E
= 1MHz
test
150 pF
h
Classifications
FE-1
R O Y
40-80 70-140 120-240
isc Website：www.iscsemi.cn
2
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