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Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA489
DESCRIPTION
·With TO-220 package
·Low collector saturation voltage
·Short switching time
APPLICATIONS
·Various inductance lamp drivers
for electrical equipment
·Inverters;converters
·Power amplification
·Switching regulator ,driver
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
V
V
P
CBO
CEO
EBO
I
C
C
Collector-base voltage Open emitter -70 V
Collector-emitter voltage Open base -60 V
Emitter-base voltage Open collector -5 V
Collector current -4 A
Collector power dissipation TC=25℃ 30 W
℃)
T
j
T
stg
Junction temperature 150 ℃
Storage temperature -55~150 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA489
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
V
I
I
h
h
Collector-emitter breakdown voltage IC=-30mA ,IB=0 -60 V
Collector-base breakdown voltage IC=-1mA; IE=0 -70 V
Emitter-base breakdown voltage IE=-1mA; IC=0 -5 V
CEsat
BEsat
CBO
EBO
FE
f
T
FE
Collector-emitter saturation voltage IC=-3A; IB=-0.3A -1.0 V
Base-emitter saturation voltage IC=-3A; IB=-0.3A -1.5 V
Collector cut-off current VCB=-70V; IE=0 -10 μA
Emitter cut-off current VEB=-5V; IC=0 -10 μA
DC current gain IC=-0.5A ; VCE=-5V 40 240
Transition frequency IC=-0.5A ; VCE=-5V 3 MHz
Classifications
R O Y
40-80 70-140 120-240
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Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA489
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
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