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INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistor 2SA483
DESCRIPTION
·High Collector Current:: IC= -1.5A
·Collector-Emitter Breakdown Voltage
: V
(BR)CEO
·Complement to Type 2SC783
APPLICATIONS
·Power amplifier applications
·Vertical output applications.
ABSOLUTE MAXIMUM RATINGS(T
= -150V(Min)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
P
T
CBO
CEO
EBO
I
C
I
E
T
stg
Collector-Base Voltage -150 V
Collector-Emitter Voltage -150 V
Emitter-Base Voltage -5 V
Collector Current-Continuous -1.5 A
Emitter Current-Continuous 1.5 A
Total Power Dissipation
C
J
=25℃
@ T
C
Junction Temperature 150
Storage Temperature Range -65~150
20 W
℃
℃
isc Website：www.iscsemi.cn
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INCHANGE Semiconductor isc Product Specification
Silicon PNP Power Transistor 2SA483
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
CE
V
BE
I
I
h
C
h
Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0 -150 V
Collector-Base Breakdown Voltage IC= -0.5mA ; IE= 0 -150 V
Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA B -1.8 V
Base-Emitter On Voltage IC= -0.5A ; VCE= -10V -1.8 V
Collector Cutoff Current VCB= -150V ; IE= 0 -100 μA
Emitter Cutoff Current VEB= -5V; IC= 0 -100 μA
DC Current Gain IC= -0.1A ; VCE= -10V 30 240
Current-Gain—Bandwidth Product IC= -0.1A ; VCE= -10V 10 MHz
Output Capacitance
CBO
EBO
FE
f
OB
(sat)
(on)
T
Classifications
FE-1
V
CB
= -10V; f
= 1MHz
test
50 pF
R O Y
30-80 70-140 120-240
isc Website：www.iscsemi.cn
2
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