Page 1
INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistor 2SA2151
DESCRIPTION
·High Collector-Emitter Breakdown Voltage V
(BR)CEO
·Good Linearity of hFE
·Complement to Type 2SC6011
APPLICATIONS
·Designed for audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(T
= -200V(Min)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
P
T
CBO
CEO
EBO
I
C
I
B
C
T
J
stg
Collector-Base Voltage -200 V
Collector-Emitter Voltage -200 V
Emitter-Base Voltage -6 V
Collector Current-Continuous -15 A
B Base Current-Continuous -4 A
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150 ℃
Storage Temperature Range -55~150 ℃
160 W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistor 2SA2151
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CE
I
CBO
I
EBO
h
C
f
(sat)
FE
OB
T
Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 -200 V
Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A B -0.5 V
Collector Cutoff Current VCB= -200V ; IE= 0 -10
Emitter Cutoff Current VEB= -6V; IC= 0 -10
DC Current Gain IC= -3A ; VCE= -4V 50 180
Output Capacitance IE= 0 ; VCB= -10V;f= 1.0MHz 450 pF
Current-Gain—Bandwidth Product IE= 0.5A ; VCE= -12V 20 MHz
hFE Classifications
O P Y
μA
μA
50-100 70-140 90-180
isc Website：www.iscsemi.cn
2
Loading...