Datasheet 2SA2092 Datasheet (ROHM)

2SA2092

z

Transistors

-1A / -60V Bipolar transistor

2SA2092

z

Applications

High-speed switching, low frequency amplification

Feature

1) High speed switching. (tf : Ty p. : 30ns at IC = -1A)

2) Low saturation voltage. (Typ. : 200mV

at I



C =

500mA, IB = 50mA)

3) Strong discharge resistance for inductive load and

capacitance load.

4) Low switching noise.

Structure

PNP epitaxial planar sili con transistor

z

Absolute maximum ratings (T a=25qC) zPackaging specifications

Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage

Collector current

DC PULSE

Power dissipation Junction temperature

Range of storage temperature

∗1 Pw=10ms ∗2 Each terminal mounted on a recommended land

Symbol

CBO

V V

CEO

EBO

V

I

C

I

CP

P

C

Tj

Tstg

∗

1

∗

2

Limits Unit

−60

−6

−1

−2

500 150

−55 to +150

External dimensions (Unit : mm)

TSMT3

2.9

0.4

(3)

1.6

(2)

(1)

(1) Base (2) Emitter (3) Collector

V V V A A

mW

°C °C

Part No. 2SA2092

z

h

FE rank

0.950.95

1.9

Abbreviated symbol : VN

Packaging type Code Basic ordering unit (pieces)

Q

120-270

1.0MAX

0.85

0.7

2.8

0

~

0.1

0.6

~

0.16

Each lead has same dimensions

0.3

TSMT3Package

Taping

3000

TL

z

Electrical characteristics (Ta=25 qC)

Parameter Symbol

Collector-emitter breakdown voltage

Collector-base breakdown voltage Emitter-base breakdown voltage

Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance Turn-on time Storage time Fall time

∗1 Pulse measurement ∗2 See switching test circuit

FE

rank

∗3 h

BV BV

BV

V

Min.

CEO

−60 −−

CBO

−60

−6

EBO

I

CBO

I

EBO

CE(sat)

h

Cob

ton

tstg

−

∗3

120

FE

∗1

−

f

T

−

∗2

tf

−

Typ. Max.

−−

−

−200

−−

300

15 30

100

30

−

−1.0

−500

270

−

Unit

V V V

μA μA

mV

MHz

pF

ns ns ns

I

C

=

−1mA

I

C

=

−100μA

E

=

−100μA

I V

CB

=

V

EB

=

C

=

−500mA, I

I

CE

=

V V

CE

=

CB

=

V

C

=

−1A,

I

B1

=

I

B2

=

100mA

I

∼

CC

V

−

−40V

−4V

−2V, I

−10V, I

−100mA

−25V

Conditions

B

=

−50mA

C

=

−100mA

E

=

100mA, f=10MHz

E

=0

, f=1MHz

1/3

2SA2092

z

Transistors

Electrical characteristics curve

10

(A)

C

1

125°C 25°C

0.1

COLLECTOR CURRENT : I

0.01

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5

BASE TO EMITTER VOLTAGE : V

Fig.1 Grounded emitter propagation

characteristics

−40°C

VCE=2V

EB

(V)

200

1000μA

160

(mA)

C

120

80

40

COLLECTOR CURRENT : I

0

012 345

900μA

800μA 700μA 600μA 500μA

400μA

300μA

200μA 100μA

IB=0μA

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.2 Typical output characteristics

1000

125°C

100

−40°C

10

DC CURRENT GAIN : hFE

1

0.001 0.01 0.1 101

COLLECTOR CURRENT : IC (A)

Fig.3 DC current gain vs. collector

current ( Ι )

25°C

VCE=2V

1000

100

10

DC CURRENT GAIN : hFE

1

0.001 0.01 0.1 101 COLLECTOR CURRENT : I

CE

=3V

V

Ta=25°C

VCE=5V

CE

=2V

C

(A)

Fig.4 DC current gain vs. collector

current (ΙΙ)

10

1

(sat) (V)

BE

0.1

BASE EMITTER SATURATION

VOLTAGE : V

0.01

0.001 0.01 0.1 101

Fig.7 Base-emitter saturation voltage

−40°C

25°C

125°C

COLLECTOR CURRENT : IC (A)

vs. collector current

10

1

(sat)(V)

CE

0.1

VOLTAGE : V

COLLECTOR SATURATION

0.01

0.001 0.01 0.1

125°C

−40°C

COLLECTOR CURRENT : I

Fig.5 Collector-emitter saturation voltage

vs. collector current ( Ι )

IC/IB=10/1

1000

(MHz)

T

100

10

TRANSITION FREQUENCY : F

1

EMITTER CURRENT : I

Fig.8 Transition frequency

25°C

C

IC/IB=10/1

(A)

Ta=25°C

CE

V

E

(A

)

10

1

(sat)(V)

CE

0.1

VOLTAGE : V

COLLECTOR SATURATION

0.01

101

0.001 0.10.01 101

IC/IB=20/1

IC/IB=10/1

COLLECTOR CURRENT : I

Fig.6 Collector-emitter saturation voltage

vs. collector current (ΙΙ)

1000

=10V

(pF)

100

10

COLLECOTR OUTPUT CAPACITACNE : Cob

EMITTER INPUT CAPACITANCE : Cib (pF)

1010.10.010.001

1

0.1 1 10 100

COLLECTOR TO BASE VOLTAGE : V

EMITTER TO BASE VOLTAGE : V

Fig.9 Collector output capacitance

Emitter input capacitance

Cib

Cob

Ta=25°C

C

(A)

Ta=25°C

f=1MHz

BE

CE

(V)

2/3

2SA2092

z

Transistors

1000

100

SWITCHING TIME : SW (ns)

10

0.01 0.1

COLLECTOR CURRENT : IC (A)

Fig.10 Switching Time

z

Switching test circuit

P

V

IN

W

PW 50μs DUTY CYCLE 1%

Ta=25°C V

CC

C/IB

I

tstg

tf

ton

1

= −25V =−IC/IB2=10

10

(A)

C

0.1

0.01

COLLECTOR CURRENT : I

0.001

10

0.01 0.1 1

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

!!

I

B1

I

B2

10ms

1

Single non repetitive pulse

100ms

DC

Fig.11 Safe operating area

RL=25Ω

C

I

VCC−25V

1ms

500μs

10

100

Base current waveform

90%

Collector current waveform

Ton Tstg Tf

10%

I

B2

I

B1

C

I

3/3

Appendix

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Notes

The products listed in this documentare designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance.

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1