Page 1
2SA2090
Transistors
Medium power transistor (−60V, −0.5A)
2SA2090
zFeatures
1) High speed switching. (Tf : Typ. : 35ns
at IC = 500mA)
2) Low saturation voltage, typically.
(Typ. : −150mV
at IC =
−
100mA, IB = −10mA)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SC5868.
zApplications
High speed switching, Low noise
zStructure
PNP Silicon epitaxial planar
zPackaging Spec ifications
Taping
TL
3000
Type
2SA2090
Package
Code
Basic ordering unit (pieces)
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Storage temperature
∗1 Pw=10ms
∗2 Each terminal mounted on a recommended land.
Symbol
V
CBO
V
CEO
EBO
V
I
C
I
CP
P
C
Tj
Tstg
−55 to +150
zDimensions (Unit : mm)
TSMT3
(1) Base
(2) Emitter
(3) Collector
Limits Unit
−60
−60
−6
−0.5
−1.0
500
150
V
V
V
A
A
mW
°C
°C
Each lead has same dimensioins
Abbreviated symbol : VM
∗1
∗2
Rev.A 1/3
Page 2
2SA2090
Transistors
zElectrical characteristics (T a=25°C)
Parameter Symbol
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
∗1 Measured using pulse current
zh
FE RANK
Q
120-270
zElectrical characteristic curves
100
80
(mA)
C
60
40
20
COLLECTOR CURRENT : I
IB=450µA
0
01 234 5
COLLECTOR TO EMITTER VOLTAGE : V
Fig.1 Typical output characteristics
400µA
350µA
300µA
250µA
200µA
150µA
100µA
50µA
0µA
CE
(V)
BV
CEO
BVCBO
BV
EBO
ICBO
IEBO
VCE(sat)
FE
h
fT
Cob
Ton
Tstg
Tf
10
(A)
C
1
0.1
0.01
COLLECTOR CURRENT : I
0.001
0.1 1
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Typ. Max.
Min.
−60 −−
−60
−6
120
−−
−
−
−
−
−
−
−
−
−
−
−
Single non repoetitive pulse
−1.0
−
−1.0
−300
−150
−−
270
400
10
35
100
60
−
−
−
−
−
100ms
DC
10
Fig.2 Safe operating area
Unit
V
I
C= −1mA
I
C= −100mA
V
V
I
E= −100µA
V
CB= −60V
µA
V
EB= −4V
µA
C= −100mA, IB= −10mA
I
mV
V
CE= −2V, IC= −50mA
MHz
V
CE= −10V, IE=100mA, f=10MHz
pF
V
CB= −10V, IE=0mA, f=1MHz
ns
I
C= −500mA,
B1= −50mA
I
ns
B2=50mA
I
ns
10ms
1ms
500µs
V
CC −25V
100
∼
−
Conditions
1000
100
SWITCHING TIME (ns)
10
0.01 0.1
COLLECTOR CURRENT : IC (A)
Fig.3 Switching Time
Tstg
Ton
∗1
∗1
Ta=25°C
CC
=25V
V
Tf
1
1000
Ta=100°C
Ta=−40°C
100
DC CURRENT GAIN : hFE
10
0.001 0.01 0.1 1
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain vs. collector
current ( Ι )
Ta=25°C
VCE=2V
1000
100
DC CURRENT GAIN : hFE
10
0.001 0.01 0.1 1
COLLECTOR CURRENT : I
Fig.5 DC current gain vs. collector
current (ΙΙ)
Ta=25°C
VCE=5V
CE
=2V
V
V
CE
=3V
C (A)
10
1
(sat)(V)
CE
125°C
0.1
VOLTAGE : V
COLLECTOR SATURATION
0.01
0.001 0.01 0.1
COLLECTOR CURRENT : I
Fig.6 Collector-emitter saturation voltage
vs. collector current ( Ι )
−40°C
25°C
C
IC/IB=10/1
1
(A)
Rev.A 2/3
Page 3
2SA2090
Transistors
10
Ta=25°C
10
IC/IB=10/1
1000
(MHz)
T
Ta=25°C
CE
=10V
V
1
(sat)(V)
CE
0.1
VOLTAGE : V
COLLECTOR SATURATION
0.01
0.001 0.10.01 1
Fig.7 Collector-emitter saturation voltage
vs. collector current (ΙΙ)
100
(pF)
OB
10
1
COLLECTOR OUTPUT CAPACITANCE : C
BASE TO COLLECTOR VOLTAGE : V
IC/IB=100/1
IC/IB=20/1
IC/IB=10/1
COLLECTOR CURRENT : I
C
(A)
Ta=25°C
f=1MHz
CB
(V)
Fig.10 Collector output capacitance
(sat) (V)
BE
1
BASE EMITTER SATURATION
VOLTAGE : V
0.1
0.001 0.01 0.1 1
Fig.8 Base-emitter saturation voltage
1
(A)
C
0.1
COLLECTOR CURRENT : I
0.01
1001010.1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5
BASE TO EMITTER VOLTAGE : V
Fig.11 Ground emitter propagation
zSwitching characteristics measurement circuit
V
IN
−40°C
25°C
125°C
COLLECTOR CURRENT : IC (A)
vs. collector current
125°C
25°C
−40°C
characteristics
RL=50Ω
I
B1
I
C
VCE=2V
BE
(V)
100
TRANSITION FREQUENCY : F
10
EMITTER CURRENT : I
Fig.9 Transition frequency
1010.10.010.001
E
(A)
P
W
PW 50 S
I
B2
VCC 25V
Duty cycle 1%
I
B1
I
Base current
waveform
B2
90%
I
Collector current
waveform
10%
Ton Tstg Tf
C
Rev.A 3/3
Page 4
Appendix
Notes
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that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
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ROHM CO., LTD. is granted to any such buyer.
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The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
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and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
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Appendix1-Rev2.0
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