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1
2
Medium power transistor (60V, 0.5A)
2SA2088
Features Dimensions (Unit : mm)
CBO
CEO
EBO
I
I
CP
P
Tj
500mA)
UMT3
(1) Emitter
(2) Base
(3) Collector
2.0
0.3
(3)
1.25
(1)
(2)
0.65
0.65
1.3
Abbreviated symbol : VM
Limits Unit
−60
−60
−6
C
−0.5
−1.0
C
200
150
−55 to 150
V
V
V
A
A
mW
°C
°C
∗
∗
1) High speed switching. (Tf : Typ. : 60ns
at IC =
2) Low saturation voltage, typically
(Typ. : 150mV at IC = 100mA, IB = 10mA)
3) Strong discharge power for inductive load and capacitance load.
4) Complements the 2SC5876
Applications
Small signal low frequency amplifier
High speed switching
Structure
PNP Silicon epitaxial planar transistor
Packaging specifications
Taping
T106
3000
Type
2SA2088
Package
Code
Basic ordering unit (pieces)
Absolute maximum ratings (Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulsed
Power dissipation
Junction temperature
Range of storage temperature
∗1 Pw=10ms
∗2 Each terminal mounted on a recommended land
Symbol
V
V
V
Tstg
0.9
0.7
0.2
2.1
0.15
0.1Min.
Each lead has same dimensions
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2011 ROHM Co., Ltd. All rights reserved.
2011.03 - Rev.B
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2
1
1000
SWITCHING TIME : (ns)
1
1000
DC CURRENT GAIN : h
1
1000
DC CURRENT GAIN : h
1
COLLECTOR SATURATION
)
1
COLLECTOR SATURATION
)
BASE EMITTER SATURATION
1
nt
Electrical characteristics (Ta=25C)
Parameter Symbol Min. Typ. Max. Unit Condition
BV
BV
BV
I
I
V
CE (sat)
CBO
EBO
h
C
t
t
f
on
stg
t
CEO
CBO
EBO
FE
T
ob
f
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
Turn-on time
Storage time
Fall time
∗1 Non repetitive pulse
∗2 See Switching charactaristics measurement circuits
FE RANK
h
Q
120−270
Electrical characteristic curves
Ta=25°C
CC
= −25V
V
C
/ IB=10 / 1
I
t
stg
100
t
f
t
on
FE
−60
−60
−6
−
−
−
120
−
−
−
−
−
100
−150
400
10
35
100
60
Ta=125°C
Ta=25°C
Ta= −40°C
Data Sheet 2SA2088
−
−
−
−
−
−
−
−
−1.0
−1.0
−500
270
−
−
−
−
−
−
V
V
V
μA
μA
mV
−
MHz
pF
ns
ns
ns
VCE= −2V
IC= −1mA
I
C
E
= −100μA
I
V
CB
V
EB
I
C
= −100mA
I
B
= −10mA
V
CE
C
= −50mA
I
CE
V
I
E
=100mA
f=10MHz
CB
V
I
E
=0A
f=1MHz
I
C
= −500mA
B1
I
B2
I
CC
V
= −100μA
= −40V
= −4V
= −2V
= −10V
= −10V
= −50mA
=50mA
−25V
∗
∗
Ta=25°C
FE
100
10
VCE= −5V
CE
= −3V
V
CE
= −2V
V
10
−0.01 −0.1 −
COLLECTOR CURRENT : IC (A)
Fig.1 Switching Time
−10
−1
(V)
CE (sat)
−0.1
VOLTAGE : V
−0.01
−0.001 −0.01 −0.1 −
COLLECTOR CURRENT : IC (A)
Fig.4
Collector-Emitter Saturation
Voltage vs. Collector Current (Ι
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2011 ROHM Co., Ltd. All rights reserved.
Ta=125°C
Ta=25°C
Ta= −40°C
IC / IB=10 / 1
10
−0.001 −0.01 −0.1 −
COLLECTOR CURRENT : IC (A)
Fig.2 DC Current Gain vs.
Collector Current (Ι)
−10
−1
(V)
CE (sat)
−0.1
VOLTAGE : V
−0.01
IC / IB=100/1
C
/ IB=20/1
I
C
/ IB=10/1
I
−0.001 −0.01 −0.1 −
COLLECTOR CURRENT : IC (A)
Fig.5
Collector-Emitter Saturation
Ta=25°C
Voltage vs. Collector Current (ΙΙ
1
0.001 0.01 0.1
COLLECTOR CURRENT : IC (A)
Fig.3 DC Current Gain vs.
Collector Current (ΙΙ)
−10
(V)
−1
BE (sat)
VOLTAGE : V
−0.1
−0.001 −0.01 −0.1 −
COLLECTOR CURRENT : IC (A)
Ta=125°C
Ta=25°C
Ta= −40°C
IC / IB=10 / 1
Fig.6 Base-Emitter Saturation
Voltage vs. Collecter Curre
2011.03 - Rev.B
Page 3
.5
s
COLLECTOR CURRENT : I
(A)
TRANSITION FREQUENCY : fT (MHz)
1
1000
0
100
)
Fig.9
Collector Output Capacitance
COLLECTOR OUTPUT
V
B
W
C
W
−1
C
Ta=125°C
Ta=25°C
−0.1
Ta= −40°C
−0.01
−0 −0.5 −1 −1
BASE TO EMITTER VOLTAGE : VBE (V)
VCE= −2V
Fig.7 Grounded Emitter
Propagation Characteristic
Switching characteristics measurement circuits
100
10
0.001 0.01 0.1
Fig.8 Transition Frequency
P
V
IN
W
PW 50μs
DUTY CYCLE ≤ 1%
Ta=25°C
CE
V
EMITTER CURRENT : IE (A)
I
B1
I
B2
= −10V
RL=50Ω
C
I
Data Sheet 2SA2088
10
CAPACITANCE : Cob (pF)
1
−0.1 −1 −10 −10
COLLECTOR TO BASE VOLTAGE : V
VCC −25
Ta=25°C
f=1MHz
(V
CB
ASE CURRENT
AVEFORM
OLLECTOR CURRENT
AVEFORM
90%
I
I
Ton Tstg Tf
10%
B2
B1
C
I
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2011 ROHM Co., Ltd. All rights reserved.
2011.03 - Rev.B
Page 4
Notes
Notice
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