Page 1
Transistors
2SA2073
High voltage discharge, High speed switching
,
Low Noise (−60V, −3A)
2SA2073
zFeatures
1) High speed switching. ( tf : Typ. : 20ns
at IC
2) Low saturation voltage, typically.
(Typ. : −200mV at IC =
−
2.0A, I
B
=
−
200mA)
3) Strong discharge power for inductive load and
capacitance load.
4) Low Noise.
5) Complements the 2SC5826.
zApplications
High speed switching, Low noise
zStructure
PNP silicon epitaxial planar transistor
zPackaging specifications
Taping
TV2
2500
Type
2SA2073
Package
Code
Basic ordering unit (pieces)
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗Pw=10ms
DC
Pulsed
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
t
j
t
stg
−
3A)
=
Limits Unit
−60
−60
−6
−3
−6
1.0
150
−55 to 150
zDimensions (Unit : mm)
ATV
(1) Emitter
(2) Collector
(3) Base
Abbreviated symbol : A2073
V
V
V
A
∗
A
W
°C
°C
Taping specifications
Rev.A 1/4
Page 2
Transistors
zElectrical characteristics (T a=25°C)
Parameter Symbol Min. Typ. Max. Unit Condition
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transistor frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
∗1 Single pulse
∗2 See switching characteristics measurement circuits
zhFE RANK
Q
120−270
BV
BV
BV
I
I
V
CE (sat)
Cob
tstg
CBO
EBO
h
f
ton
FE
T
tf
CEO
CBO
EBO
−60
−60
−6
−
−
−
120
−
−
−
−
−
−
−
−
−
−
−200
−
200
40
20
130
20
−
−
−
−1.0
−1.0
−500
270
−
−
−
−
−
V
V
V
µA
µA
mV
−
MHz
pF
ns
ns
ns
I
C
=
−1mA
C
=
−100µA
I
I
E
=
−100µA
V
CB
=
−40V
V
EB
=
−4V
I
C
=
−2.0A
I
B
=
−200mA
V
CE
=
−2V
I
C
=
−100mA
V
CE
=
−10V
I
E
=100mA
f=10MHz
V
CB
=
−10V
I
E
=0mA
f=1MHz
I
C
=
−3A
B1
=
−300mA
I
B2
=300mA
I
∼
CC
−25V
V
−
2SA2073
∗1
∗1
∗2
Rev.A 2/4
Page 3
Transistors
zElectrical characteristics curves
200
160
(mA)
C
120
80
40
COLLECTOR CURRENT : I
0
COLLECTOR TO EMITTER VOLTAGE : V
Fig.1 Typical output characteristics
1000
125°C
FE
25°C
100
−40°C
10
DC CURRENT GAIN : h
IB=1000µA
900µA
800µA
700µA
600µA
500µA
400µA
300µA
200µA
100µA
0µA
VCE=2V
CE
(V)
(A)
C
COLLECTOR CURRENT : I
0.01
512340
(V)
CE(sat)
0.1
0.01
10
1
125°C
0.1
0 0.1 0.2 0.3 0.4 0.50.6 0.7 0.80.9 1 1.1 1.2 1.3 1.4 1.5
BASE TO EMITTER VOLTAGE : VBE (V)
VCE=2V
25°C
−40°C
Fig.2 Grounded emitter propagation
characteristics
1
Ic/Ib=20/1
Ic/Ib=10/1
Ta=25
°C
1000
FE
100
10
DC CURRENT GAIN : h
1
0.001 0.01 0.1 101
COLLECTOR CURRENT : IC (A)
Fig.3 DC current gain
vs.collector current ( Ι )
1
(V)
CE(sat)
0.1
2SA2073
VCE=2V
VCE=5V
VCE=3V
VCE=2V
IC/Ib
=10/1
125°C
25°C
−40°C
1
0.001 0.01 0.1 101
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain
vs.collector current ( ΙΙ )
0.001
0.001 0.01 0.1 101
COLLECTOR SATURATION VOLTAGE : V
COLLECTOR CURRENT : I
C
(A)
Fig.5 Collector-emitter saturation voltage
vs.collector current ( Ι )
0.01
0.001 0.01 0.1 101
COLLECTOR SATURATION VOLTAGE : V
COLLECTOR CURRENT : IC (A)
Fig.6 Collector-emitter saturation voltage
vs.collector current ( ΙΙ )
10
(V)
BE(sat)
1
0.1
0.001 0.01 0.1 101
BASE EMITTER SATURATION VOLTAGE : V
−40°C
125°C
COLLECTOR CURRENT : IC (A)
25°C
IC/Ib
=10/1
Fig.7 Base-emitter saturation voltage
vs. collector current
1000
(MHz)
T
100
10
TRANSITION FREQUENCY : f
1
0.001 0.01 0.1 101
EMITTER CURRENT : I
Fig.8 Transition frequency
Ta=25
CE
V
E
(A)
=10V
°C
1000
(pF)
100
10
1
COLLECTOR OUTPUT CAPACITANCE : Cob
0.1 10 1001
COLLECTOR TO BASE VOLTAGE : V
Ta=25°C
f=1MHz
CB
(V)
Fig.9 Collector output capacitance
Rev.A 3/4
Page 4
Transistors
1000
100
SW (ns)
tstg
tf
ton
10
COLLECTOR CURRENT : Ic (A)
Ta=25°C
V
CC
=25V
1010.10.01
Fig.3 Switching Time
zSwitching characteristics measurement circuits
V
IN
10
(A)
C
1
0.1
0.01
COLLECTOR CURRENT : I
0.001
COLLECTOR EMITTER VOLTAGE : V
Fig.11 Safe operating area
P
W
PW 50µs
DUTY CYCLE 1%
2SA2073
1ms
10ms
100ms
DC
I
B1
I
B2
100µs
1001010.1
CE
(V)
RL=8.3Ω
C
I
VCC −25V
BASE CURRENT
WAVEFORM
COLLECTOR CURRENT
WAVEFORM
90%
I
B2
I
B1
t
on
t
stg
10%
t
f
I
C
Rev.A 4/4
Page 5
Appendix
Notes
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
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exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
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The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
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and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
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order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
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Appendix1-Rev2.0
Page 6
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