Datasheet 2SA2072 Datasheet (ROHM)

Page 1
2SA2072
zFeatures zDimensions (Unit : mm)
−
CBO
CEO
EBO
I
C
CP
tj
3A)
=
CPT3 (SC-63) <SOT-428>
(1) Base (2) Collector (3) Emitter
Abbreviated symbol : A2072
Limits Unit
−60
−60
−6
−3
∗1
C
−6
1.0
10.0 150
−55 to 150
∗2 ∗3
V V V A
A W W
°C °C
1) High speed switching. ( tf : Typ. : 20ns
at IC
2) Low saturation voltage, typically. (Typ. : −200mV at IC =
−
2.0A, I
B
=
−
200mA)
3) Strong discharge power for inductive load and capacitance load.
4) Low Noise.
5) Complements the 2SC5825.
zApplications High speed switching, Low noise
zStructure PNP silicon epitaxial planar transistor
zPackaging specifications
Taping
TL
2500
Type
2SA2072
Package Code Basic ordering unit (pieces)
zAbsolute maximum ratings (Ta=25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage
Collector current
Power dissipation
Junction temperature Range of storage temperature
∗1 Pw=100ms ∗2 Ta=25°C ∗3 Tc=25°C
DC Pulsed
Symbol
V V V
I
P
tstg
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2009.02 - Rev.B
Page 2
V)
s
.5
)
n
0
1000
DC CURRENT GAIN : h
0
1000
DC CURRENT GAIN : h
)
0
1
)
e
0
1
)
e
2SA2072
zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Condition
BV
Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transistor frequency
Collector output capacitance
Turn-on time Storage time Fall time
∗1 Non repetitive pulse ∗2 See switching characteristics measurement circuits
zhFE RANK
Q
120−270
zElectrical characteristics curves
200
160
(mA)
C
120
80
40
COLLECTOR CURRENT : I
0
COLLECTOR TO EMITTER VOLTAGE : V
Fig.1 Typical output characteristic
125°C
FE
25°C
100
−40°C
10
IB=1000µA
900µA 800µA
700µA 600µA
500µA 400µA
300µA 200µA 100µA
0µA
Ta=25°C
512340
CE
(
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
∗1
V
CE (sat)
h
FE
∗1
f
T
Cob
∗2
ton
∗2
tstg
∗2
tf
(A)
C
COLLECTOR CURRENT : I
0.01
(V
CE(sat)
0.01
−60
−60
−6
−
−
−
120
−
−
−
−
−
10
1
0.1
0 0.1 0.2 0.3 0.4 0.50.6 0.7 0.80.9 1 1.1 1.2 1.31.4 1
BASE TO EMITTER VOLTAGE : VBE (V
−
−
−
−
−
−200
−
180
50
20
150
20
125°C
Fig.2 Grounded emitter propagatio characteristics
0.1
Ic/Ib=20/1
Ic/Ib=10/1
25°C
−40°C
−
−
−
−1.0
−1.0
−500
270
−
−
−
−
−
VCE=2V
Ta=25
°C
V V V
µA µA
mV
−
MHz
pF
ns ns ns
C
=
−1mA
I
C
=
−100µA
I I
E
= −100µA
V
CB
= −20V
EB
= −4V
V I
C
= −2A
I
B
= −0.2A
V
CE
= −2V
C
= −100mA
I
CE
= −10V
V
E
=100mA
I
=10MHz
f
CB
= −10V
V
E
=0mA
I
=1MHz
f
C
= −3A
I
B1
= −300mA
I
B2
=300mA
I
CC
−25V
V
FE
100
10
1
0.001 0.01 0.1 1
COLLECTOR CURRENT : I
Fig.3 DC current gain vs.collector current ( Ι )
(V
CE(sat)
0.1
VCE=3V
IC/Ib
125°C
Ta=25
1
C
−40°C
Data Sheet
°C
VCE=5V
VCE=2V
(A)
=10/1
25°C
1
0.001 0.01 0.1 1
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1
C
COLLECTOR CURRENT : I
(A)
Fig.4 DC current gain vs.collector current ( ΙΙ
0.001
0.001 0.01 0.1 1
COLLECTOR SATURATION VOLTAGE : V
COLLECTOR CURRENT : I
1
C
(A)
Fig.5 Collector-emitter saturation voltag vs.collector current ( Ι )
2/3
0.01
0.001 0.01 0.1 1
COLLECTOR SATURATION VOLTAGE : V
COLLECTOR CURRENT : IC (A)
1
Fig.6 Collector-emitter saturation voltag vs.collector current ( ΙΙ )
2009.02 - Rev.B
Page 3
0
)
e
0
1000
TRANSITION FREQUENCY : f
(MHz)
0
1000
V)
e
0
V
B W
C W
2SA2072
(V
BE(sat)
10
1
−40°C
IC/Ib
=10/1
Ta=25
°C
CE
=10V
V
T
100
(pF)
100
Ta=25°C f=1MHz
Data Sheet
25°C
125°C
0.1
0.001 0.01 0.1 1
BASE EMITTER SATURATION VOLTAGE : V
COLLECTOR CURRENT : IC (A)
1
Fig.7 Base-emitter saturation voltag
10
1
0.001 0.01 0.1 1
EMITTER CURRENT : I
Fig.8 Transition frequency
vs. collector current
1000
100
SW (ns)
tstg
tf
ton
10
COLLECTOR CURRENT : IC (A)
Fig.10 Switching Time
10.10.01
Ta=25°C V
CC
=25V
C/IB
=10/1
I
1
zSwitching characteristics measurement circuits
RL=8.3Ω
C
I
P
V
IN
W
PW 50µs DUTY CYCLE 1%
B1
I
B2
I
VCC −25
10
1
1
E
(A)
COLLECTOR OUTPUT CAPACITANCE : Cob
0.1 10 10
COLLECTOR TO BASE VOLTAGE : V
1
CB (
Fig.9 Collector output capacitanc
ASE CURRENT
AVEFORM
OLLECTOR CURRENT
AVEFORM
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90%
ton tstg tf
10%
I
B2
I
B1
C
I
3/3
2009.02 - Rev.B
Page 4
Appendix
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wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM
upon request.
Examples of application circuits, circuit constants and any other information contained herein illustrate the
standard usage and operations of the Products. The peripheral conditions must be taken into account
when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document. However, should
you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no re-
sponsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and examples
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sponsibility whatsoever for any dispute arising from the use of such technical information.
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Please be sure to implement in your equipment using the Products safety measures to guard against the
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Notes
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Appendix-Rev4.1
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