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2SA2049
Transistor
Medium power transistor (−30V, −2.0A)
2SA2049
!
!External dimensions (Units : mm)
!
!Features
!!
1) High speed switching. (Tf : Typ. : 20ns
at IC
2) Low saturation voltage, typically
(Typ. : −250mV at IC = −1.0A, IB = −100mA)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SC5731
!Applications
Small signal low frequency amplifier
High speed switching
!!!!
Structure
PNP Silicon epitaxial planar transistor
!!!!
Packaging specifications
Type
2SA2049
Package
Code
Basic ordering unit (pieces)
Taping
T100
1000
!!!!
Absolute maximum ratings
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗1 Pw=100ms
*2 Mounted on a 40×40×0.7 (mm) ceramic substrate
(Ta=25°C)
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
Limits
−30
−30
−6
−2.0
−4.0
500
2.0 W
150
−55~+150
= −2.0A)
Unit
mW
°C
°C
!!
MPT3
(1)Base
(2)Collector
(3)Emitter
1.5
3.0
1.5
Abbreviated symbol : UX
4.0
1.0
2.5
(1)
0.4
(2)
0.5
(3)
0.4
0.4
0.5
4.5
1.6
1.5
Each lead has same dimensions
V
V
V
A
∗1
A
∗2
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Page 2
Transistor
!
!Electrical characteristics (T a= 25°C)
!!
Parameter Symbol Min. Typ. Max. Unit Conditions
BV
CBO
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
BV
BV
V
−30 −−VIC= −100µA
CEO
−30 −−V
EBO
−6 −−V
CBO
I
I
EBO
CE (sat)
h
−−−1.0 µA
−−−1.0 µA
−−250 −500 mV
FE
120 − 390 −
f
T
− 350 − MHz
Cob − 25 − pF
Turn-on time Ton − 25 − ns
Storage time Tstg − 100 − ns
Fall time Tf − 20 − ns
!!!!
FE
h
RANK
QR
120−270 180−390
!
!Electrical characteristic curves
!!
−10
(A)
C
−
1
100ms
DC
−0.1
−0.01
Single
non repetitive
COLLECTOR CURRENT : I
Pulse
−0.001
−0.01 −0.1 −1 −10 −100
COLLECTOR TO EMITTER VOLTAGE : V
Fig.1 Safe Operating Area
1ms
10ms
CE
(V)
1000
100
SWITCHING TIME : (ns)
10
−0.01 −0.1 −1 −10
COLLECTOR CURRENT : IC (A)
Fig.2 Switching Time
Tstg
Tf
Ton
1000
FE
100
10
DC CURRENT GAIN : h
1
−0.001 −0.01 −0.1 −1 −10
COLLECTOR CURRENT : IC (A)
VCE= −5V
V
CE
= −3V
V
CE
= −2V
Ta=25°C
Fig.4 DC Current Gain vs.
Collector Current (ΙΙ)
−10
Ta=125°C
−1
(V)
Ta=25°C
Ta= −40°C
CE (sat)
−0.1
COLLECTOR SATURATION
VOLTAGE : V
−0.01
−0.001 −0.01 −0.1 −1 −10
COLLECTOR CURRENT : IC (A)
Fig.5 Collector-Emitter Saturation
Voltage vs.
Collector Current (Ι)
I
C
= −1mA
I
E
= −100µA
CB
= −20V
V
V
EB
= −4V
I
C
= −1.0A, IB= −100mA
V
CE
= −2V, IC= −100mA
V
CE
= −10V, IE=100mA, f=10MHz
CB
= −10V, IE=0A, f=1MHz
V
I
C
= −2.0A
I
B1
= −200mA
I
B2
=200mA
V
CC
−25V
1000
Ta=25°C
CC
= −25V
V
C/IB
=10/1
I
IC/IB=10/1
FE
100
10
DC CURRENT GAIN : h
−0.001 −0.01 −0.1 −1 −10
−10
(V)
CE (sat)
−0.1
COLLECTOR SATURATION
VOLTAGE : V
−0.01
2SA2049
VCE= −2V
Ta=125°C
Ta=25°C
Ta= −40°C
1
COLLECTOR CURRENT : IC (A)
Fig.3 DC Current Gain vs.
Collector Current (Ι)
Ta=25°C
−1
IC/IB=20/1
IC/IB=10/1
−0.001 −0.01 −0.1 −1 −10
COLLECTOR CURRENT : IC (A)
Fig.6 Collector-Emitter Saturation
Voltage vs.
Collector Current (ΙΙ)
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Page 3
Transistor
−10
−1
(V)
BE (sat)
Ta= −40°C
Ta=25°C
−0.1
Ta=125°C
2SA2049
IC/IB=10/1
−10
(A)
C
Ta=125°C
Ta=25°C
−1
Ta= −40°C
−0.1
VCE= −2V
1000
100
10
Ta=25°C
V
CE= −10V
BASE EMITTER SATURATION
VOLTAGE : V
−0.01
−0.001 −0.01 −0.1 −1 −10
COLLECTOR CURRENT : IC (A)
Fig.7 Base-Emitter Saturation
COLLECTOR CURRENT : I
−0.01
0 −0.5 −1 −1.5
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.8 Grounded Emitter
Voltage vs.Collecter Current
100
10
COLLECTOR OUTPUT
CAPACITANCE : Cob (pF)
1
−0.1 −1 −10 −100
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.10
Collector Output Capacitance
Ta=25°C
f=1MHz
!
!Switc hing ch aract eristi cs measur ement circuit s
!!
VIN
PW
W 50µs
P
DUTY CYCLE 1%
Propagation Characteristics
RL=12.5Ω
C
IB1
IB2
I
TRANSITION FREQUENCY : fT (MHz)
1
0.001 0.01 0.1 1 10
EMITTER CURRENT : IE (A)
Fig.9 Transition Frequency
VCC −25V
BASE CURRENT
WAVEFORM
COLLECTOR CURRENT
WAVEFORM
90%
Ton Tstg Tf
10%
IB2
IB1
C
I
3/3
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Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0
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