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Elektronische Bauelemente
2SA2018F
PNP Silicon
General Purpose Transistor
RoHS Compliant Product
FEATURES
High Collector Current
Low VCE(sat) - VCE(sat) -250mV at IC = -200mA/IB=-10mA
İ
MARKING CODE
BW
2.
Base
1.
Emitter
3.
Collector
Maximum Ratings (Ta=25oC unless otherwise specified)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (Continuous)
Collector power dissipation
Junction temperature
Storage temperature
Symbol Limits Unit
V
V
V
Tstg
P
Tj
S
CBO
CEO
EBO
C
SOT-523
Dim Min Max
A 1.50 1.70
A
L
B 0.78
0.82
C 0.80 0.82
D 0.28 0.32
Top View
2
3
B
1
D
G
C
H
K
J
G 0.90 1.10
H 0.00 0.10
J 0.10 0.20
K 0.35 0.41
L 0.49 0.51
S 1.50 1.70
All Dimension in mm
-15 V
-12
-6
-0.5I
C
0.15
-55~+150
-55~+150
V
V
A
W
o
C
o
C
Electrical Characteristics (Tamb=25oC unless otherwise specified)
Parameter Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector Output capacitance
01-Jun-2002 Rev. A
BV
BV
BV
V
I
CBO
I
EBO
h
CE(sat)
f
C
CBO
CEO
EBO
FE
T
ob
Typ. Max. Unit Conditions
Min.
-15
-12
-6
270
260
6.5
-0.1
-0.1
680
-0.25
VI
I
V
I
V
V
μ
A
μ
A
V
V
I
V
V
MHz
V
pF
C
=-10 μ A, IE=0
C
=-1mA, IB=0
E
=-10μA, IC=0
CB
=-15V, IE=0
EB
=-6V, IC=0
CE
=-2V, IC=-10mA
C
=-200mA, IB=-10mA
CE
=-2V, IC=-10mA, f=100MHz
CB
=-10V, IE=0, f=1MHz
Any changing of specification will not be informed individual
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Elektronische Bauelemente
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2SA2018F
PNP Silicon
General Purpose Transistor
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 2
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