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SSeemmiiccoonndduuccttoorr
2SA1981
PNP Silicon Transistor
Description
• Audio power amplifier application
Features
• High hFE : hFE=100~320
• Complementary pair with 2SC5344
Ordering Information
Type NO. Marking Package Code
2SA1981 A1981 TO-92
Outline Dimensions unit :
4.5±0.1
3.45±0.1
2.25±0.1
mm
0.1
±
1.20
0.1
±
4.5
0.40
±
14.0
1 2 3
0.4±0.02
1.27 Typ
2.54 Typ
0.38
2.06±0.1
.
.
PIN Connections
1. Emitter
2. Collector
3. Base
KST-9003-001 1
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2SA1981
Absolute maximum ratings
(Ta=25
C)
°°°°
Characteristic Symbol Ratings Unit
Collector-Base voltage V
Collector-Emitter voltage V
Emitter-Base voltage V
Collector current IC -800 mA
Collector dissipation PC 625 mW
Junction temperature Tj 150 °C
Storage temperature T
Electrical Characteristics
-35 V
CBO
-30 V
CEO
-5 V
EBO
-55~150 °C
stg
(Ta=25
C)
°°°°
Characteristic Symbol Test Condition Min. Typ. Max. Unit
I
Collector-Base breakdown voltage BV
Collector-Emitter breakdown voltage BV
Emitter-Base breakdown voltage BV
Collector cut-off current I
Emitter cut-off c urrent I
DC current gain
Collector-Emitter satu ration voltage V
Transition frequency fT VCE=-5V, IE=10mA - 120 - MHz
Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz - 19 - pF
CBO
CEO
EBO
CBO
EBO
*
h
FE
CE(sat)
=-500µA, IE=0
C
IC=-1mA, IB=0 -30 - - V
=-50µA, IC=0
I
E
VCB=-35V, IE=0 - - -0.1
VEB=-5V, IC=0 - - -0.1
VCE=-1V, IC=-100mA 100 - 320 -
IC=-500mA, IB=-20mA - - -0.5 V
-35 - - V
-5 - - V
A
µ
A
µ
* : h
rank / O : 100~200, Y : 160~320
FE
KST-9003-001 2
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2SA1981
Electrical Characteristic Curves
Fig. 1 Pc-Ta
Fig. 3 IC - V
CE
Fig. 2 IC -VBE
Fig. 4 h
FE
- I
C
Fig. 5 V
KST-9003-001 3
CE(SAT)
- I
C
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