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2SA1962/FJA4213
PNP Epitaxial Silicon Transistor
Applications
• High-Fidelity Audio Output Amplifier
• General Purpose Power Amplifier
Features
• High Current Capability: IC = -17A
• High Power Dissipation : 130watts
• High Frequency : 30MHz.
• High Voltage : V
• Wide S.O.A for reliable operation.
• Excellent Gain Linearity for low THD.
• Complement to 2SC5242/FJA4313.
• Thermal and electrical Spice models are available.
• Same transistor is also available in:
-- TO264 package, 2SA1943/FJL4215 : 150 watts
-- TO220 package, FJP1943 : 80 watts
-- TO220F package, FJPF1943 : 50 watts
CEO
= -250V
January 2009
1
1.Base 2.Collector 3.Emitter
TO-3P
2SA1962/FJA4213 — PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings* T
= 25°C unless otherwise noted
a
Symbol Parameter Ratings Units
BV
CBO
BV
CEO
BV
EBO
I
C
I
B
P
D
TJ, T
STG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics* T
Collector-Base Voltage -250 V
Collector-Emitter Voltage -250 V
Emitter-Base Voltage -5 V
Collector Current -17 A
Base Current -1.5 A
Total Device Dissipation(TC=25°C)
Derate above 25°C
Junction and Storage Temperature - 50 ~ +150 °C
=25°C unless otherwise noted
a
130
1.04
Symbol Parameter Max. Units
R
θJC
* Device mounted on minimum pad size
Thermal Resistance, Junction to Case 0.96 °C/W
hFE Classification
W
W/°C
Classification R O
h
FE1
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
2SA1962/FJA4213 Rev. C 1
55 ~ 110 80 ~ 160
Page 2
2SA1962/FJA4213 — PNP Epitaxial Silicon Transistor
Electrical Characteristics* T
=25°C unless otherwise noted
a
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
VCE(sat) Collector-Emitter Saturation Voltage IC=-8A, IB=-0.8A -0.4 -3.0 V
VBE(on) Base-Emitter On Voltage VCE=-5V, IC=-7A -1.0 -1.5 V
f
T
C
ob
* Pulse Test: Pulse Width=20µs, Duty Cycle≤2%
Collector-Base Breakdown Voltage IC=-5mA, IE=0 -250 V
Collector-Emitter Breakdown Voltage IC=-10mA, RBE=∞ -250 V
Emitter-Base Breakdown Voltage IE=-5mA, IC=0 -5 V
Collector Cut-off Current VCB=-230V, IE=0 -5.0 µA
Emitter Cut-off Current VEB=-5V, IC=0 -5.0 µA
DC Current Gain VCE=-5V, IC=-1A 55 160
DC Current Gain VCE=-5V, IC=-7A 35 60
Current Gain Bandwidth Product VCE=-5V, IC=-1A 30 MHz
Output Capacitance VCB=-10V, f=1MHz 360 pF
Ordering Information
Part Number Marking Package Packing Method Remarks
2SA1962RTU A1962R TO-3P TUBE hFE1 R grade
2SA1962OTU A1962O TO-3P TUBE hFE1 O grade
FJA4213RTU J4213R TO-3P TUBE hFE1 R grade
FJA4213OTU J4213O TO-3P TUBE hFE1 O grade
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
2SA1962/FJA4213 Rev. C 2
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Typical Characteristics
2SA1962/FJA4213 — PNP Epitaxial Silicon Transistor
-20
-18
-16
-14
-12
-10
-8
-6
[mA], COLLECTOR CURRENT
-4
C
I
-2
-0 -2 -4 -6 -8 -10
IB = -1A
VCE[V], COL L ECTOR-E MITTER V OLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain ( R Grade )
o
Tj = 125
C
o
Tj = 25
C
100
o
Tj = -25
C
10
, DC CURRENT GAIN
FE
h
1
0.1 1 10
IC[A], COLLECTOR CURRENT
0
0
6
-
=
I
B
0
0
5
-
=
I
B
0
4
-
=
I
B
IB = -300mA
IB = -200mA
IB = -100mA
IB = -900mA
IB = -800mA
IB = -700mA
A
m
A
m
A
m
0
VCE = -5V
o
Tj = 125
C
o
C
Tj = 25
100
o
C
Tj = -25
10
, DC CURRENT GAIN
FE
h
1
0.1 1 10
VCE = -5V
IC[A], COLLECTOR CURRENT
10000
1000
100
Vce(sat)[mV], SATURATION VOLTAGE
Tj=125
10
0.1 1 10
o
Tj=25
C
o
C
o
C
Tj=-25
Ic=-1 0 Ib
Ic[A], COL L ECT OR CURRE NT
Figure 3. DC current Gain ( O Grade ) Figure 4. Collector-Emitter Saturation Voltage
10000
o
C
Tj=-25
1000
100
Vbe(sat)[mV], SATURATION VOLTAGE
0.1 1 10
Tj=25
o
C
Tj=125
Ic[A], COL L ECT OR CURRE NT
14
Ic=-1 0 Ib
o
C
12
10
8
6
4
[A], COLLECTOR CURRENT
C
2
I
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
VBE[V], BASE-EMITTER VOLTAGE
VCE = 5V
Figure 5. Base-Emitter Saturation Voltage Figure 6. Base-Emitter On Voltage
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
2SA1962/FJA4213 Rev. C 3
Page 4
Typical Characteristics
2SA1962/FJA4213 — PNP Epitaxial Silicon Transistor
1.0
0.9
C / W]
o
[
0.8
thjc
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1E-6 1E-5 1E-4 1E-3 0.01 0.1 1
Transient Thermal Resistance, R
Pulse duration [sec]
Figure 7. Thermal Resistance Figure 8. Safe Operating Area
160
140
120
100
80
60
40
[W], POWER DISSIPATION
C
P
20
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
-100
IC MAX. (Pulsed*)
-10
-1
IC MAX. (DC)
10ms*
100ms*
DC
-0.1
*SINGLE NONREPETITIVE
[A], COLLECTOR CURRENT
C
I
PULSE TC=25[oC]
-0.01
110100
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 9. Power Derating
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
2SA1962/FJA4213 Rev. C 4
Page 5
Package Dimensions
15.60
0
0
ø
5
5
5
5
3.20
±0.10
13.60
9.60
±0.20
±0.20
±0.20
TO-3P
±0.20
3.80
4.80
1.50
±0.2
+0.1
–0.0
2SA1962/FJA4213 — PNP Epitaxial Silicon Transistor
±0.20
±0.20
±0.20
±0.20
12.76
19.90
23.40
13.90
2.00
±0.20
±0.30
±0.20
3.50
]
±0.30
16.50
3.00
±0.20
1.00
±0.20
5.45TYP
[5.45
±0.30
]
5.45TYP
[5.45
±0.20
18.70
1.40
0.60
±0.2
+0.1
–0.0
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
2SA1962/FJA4213 Rev. C 5
Dimensions in Millimeters
Page 6
2SA1962/FJA4213 PNP Epitaxial Silicon Transistor2SA1962/FJA4213
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
2SA1962/FJA4213 Rev. C 6
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