Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SA1942
DESCRIPTION
·With TO-3PL package
·Complement to type 2SC5199
APPLICATIONS
·Power amplifier applications
·Recommended for 80W high fidelity audio
frequency amplifier output stage
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PL) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current -12 A
IB Base current -1.2 A
PC Collector power dissipation
Collector-base voltage Open emitter -160 V
Collector-emitter voltage Open base -160 V
Emitter-base voltage Open collector -5 V
℃)
T
=25℃
C
120 W
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SA1942
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
fT Transition frequency IC=-1A ; VCE=-5V 30 MHz
COB Collector output capacitance IE=0; f=1MHz;VCB=-10V 320 pF
Collector-emitter breakdown voltage IC=-50mA ;IB=0 -160 V
Collector-emitter saturation voltage IC=-8A ;IB=-0.8A -2.5 V
Base-emitter voltage IC=-6A ; VCE=-5V -1.5 V
Collector cut-off current VCB=-160V; IE=0 -5
Emitter cut-off current VEB=-5V; IC=0 -5
DC current gain IC=-1A ; VCE=-5V 55 160
DC current gain IC=-6A ; VCE=-5V 35
μA
μA
h
classifications
FE-1
R O
55-110 80-160
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SA1942
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm)
3
Page 4
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SA1942
4
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