Page 1
Ordering number : ENN5507B
2SA1875 / 2SC4976
PNP / NPN Epitaxial Planar Silicon Transistors
2SA1875 / 2SC4976
High-Definition CRT Display
Video Output Applications
Features
•
High fT : fT=400MHz(typ).
•
High breakdown voltage : V
•
Large current capacitance.
• Small reverse transfer capacitance and excellent high
-frequency characteristic :
Cre=3.4pF(NPN), 4.2pF(PNP).
• Adoption of FBET process.
≥200V(min).
CEO
Package Dimensions
unit : mm
2045B
[2SA1875 / 2SC4976]
6.5
unit : mm
2044B
5.0
4
0.85
0.7
0.6
1
23
2.3 2.3
[2SA1875 / 2SC4976]
6.5
5.0
4
1.5
5.5
0.8
1.55.5
1.6
7.0
7.5
2.3
2.3
0.5
0.5
0.5
1.2
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
7.0
2.5
0.5
1.2
0 to 0.2
1.2
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
0.85
12
0.6
2.3 2.3
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
3
0.8
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52101 TS IM TA-9766
No.5507-1/5
Page 2
2SA1875 / 2SC4976
Specifications
( ) : 2SA1875
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Base Current I
Collector Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg --55 to +150 °C
CBO
CEO
EBO
C
CP
B
C
Tc=25°C12W
Electrical Characteristics at Ta=25°C
(--)200 V
(--)200 V
(--)3 V
(--)300 mA
(--)600 mA
(--)30 mA
0.8 W
Parameter Symbol Conditions
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain
Gain-Bandwidth Product f
Output Capacitance Cob VCB=(--)30V, f=1MHz (5.0)4.2 pF
Reverse Transfer Capacitance Cre VCB=(--)30V, f=1MHz (4.2)3.4 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)50mA, IB=(--)5mA
Base-to-Emitter Saturation Voltage VBE(sat) IC=(--)50mA, IB=(--)5mA
Collector-to-Base Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V
Emitter-to-Base Breakdown Voltage V
* : The 2SA1875 / 2SC4976 are classified by 50mA hFE as follows
Rank D E F
h
60 to 120 100 to 200 160 to 320
FE
CBO
EBO
hFE1VCE=(--)10V, IC=(--)50mA 60* 320*
hFE2VCE=(--)10V, IC=(--)250mA 20
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
VCB=(--)150V, IE=0 (--)0.1 µA
VEB=(--)2V, IC=0 (--)1.0 µA
VCE=(--)10V, IC=(--)100mA 400 MHz
T
=(--)10µA, IE=0 (--)200 V
=(--)1mA, RBE=∞ (--)200 V
=(--)100µA, IC=0 (--)3 V
Ratings
min typ max
(--)1.0
(--)1.0
Unit
V
V
IC -- V
--350
--300
--250
-- mA
C
--200
--150
--100
Collector Current, I
--50
0
0 --0.2 --0.4 --0.6 --1.0--0.8 --1.2
BE
C
°
Ta=75
2SA1875
VCE= --10V
C
C
°
°
25
--25
Base-to-Emitter V oltage, VBE -- V
IT03431
IC -- V
BE
C
°
Ta=75
C
C
°
°
25
--25
-- mA
C
350
300
250
200
150
100
Collector Current, I
50
0
0 0.2 0.4 0.6 1.00.8 1.2
Base-to-Emitter V oltage, VBE -- V
2SC4976
VCE=10V
IT03432
No.5507-2/5
Page 3
FE
100
2SA1875 / 2SC4976
h
-- I
Ta=75
25
--25
FE
°
C
°
C
C
°
5
3
2
7
5
C
2SA1875
VCE= --10V
FE
5
3
2
Ta=75
100
7
5
25
--25
h
-- I
FE
C
2SC4976
VCE=10V
C
°
°
C
C
°
3
DC Current Gain, h
2
10
357
2
--1.0
7
(sat) -- V
5
CE
3
2
--0.1
Collector-to-Emitter
Saturation V oltage, V
7
5
357
5
3
2
(sat) -- V
BE
--1.0
7
5
--10 --100
Collector Current, IC -- mA
VCE(sat) -- I
Ta=75
--25
C
°
25
--10 --100
C
C
°
C
°
Collector Current, IC -- mA
VBE(sat) -- I
C
25°C
°C
Ta= --25
75°C
2SA1875
I
C / IB
Ta= --25°C
2SA1875
IC / IB=10
3223 57 5
IT03433
=10
25°C
75°C
IT03435
3
DC Current Gain, h
2
10
357
10 100
Collector Current, IC -- mA
3
2SC4976
2
I
=10
C / IB
1.0
(sat) -- V
7
CE
5
3
2
Collector-to-Emitter
Saturation V oltage, V
0.1
7
3223 57
5
357
VCE(sat) -- I
Ta=75
C
°
25
10 100
--25
C
C
°
C
°
Collector Current, IC -- mA
5
3
2
VBE(sat) -- I
C
3223 57 5
IT03434
3223 57 5
IT03436
2SC4976
IC / IB=10
(sat) -- V
BE
1.0
7
5
Ta= --25
75°C
°C
25°C
3
2
Base-to-Emitter
Saturation V oltage, V
--0.1
3
2
10
7
5
3
2
Output Capacitance, Cob -- pF
1.0
--1.0 --10 --100
23755735 23
--10 --100
Collector Current, IC -- mA
Cob -- V
2735 3727
CB
Collector-to-Base Voltage, V
CB
3
2
Base-to-Emitter
Saturation V oltage, V
0.1
IT03437 IT03438
3
2
10
7
5
3
2
Output Capacitance, Cob -- pF
1.0
2735 3727
1.0 10 100
Collector-to-Base Voltage, V
-- V
2SA1875
f=1MHz
25
ITR04480
23755735 23
10 100
Collector Current, IC -- mA
Cob -- V
CB
CB
2SC4976
f=1MHz
ITR04481
-- V
No.5507-3/5
25
Page 4
2SA1875 / 2SC4976
3
2
Cre -- V
CB
2SA1875
f=1MHz
3
2
Cre -- V
CB
2SC4976
f=1MHz
10
7
5
3
2
Reverse Transfer Capacitance, Cre -- pF
1.0
2735 3727
--1.0 --10 --100
Collector-to-Base Voltage, V
f
-- I
T
2
1000
MHz
7
--
5
T
3
2
100
7
5
3
2
Gain-Brandwidth Product, f
10
2233755237
--1.0 --10 --100
C
Collector Current, IC -- mA
1000
-- mA
C
ICP=600mA
7
5
IC=300mA
3
2
100
7
5
3
2
DC operation Ta=25°C P
A S O
C
-- V
CB
2SA1875
VCE= --10V
1ms
10ms
DC operation
=0.8W
ITR04482
ITR04484
10
7
5
3
2
Reverse Transfer Capacitance, Cre -- pF
25
57
1.0
2
1000
MHz
7
--
5
T
3
2
100
7
5
3
2
Gain-Brandwidth Product, f
10
1.0
0.8
-- W
C
0.6
0.4
2735 3727
1.0 10 100
Collector-to-Base Voltage, V
f
-- I
T
C
CB
-- V
2SC4976
VCE=10V
2233755237
1.0 10 100
Collector Current, IC -- mA
P
-- Ta
C
No heat sink
25
ITR04483
57
ITR04485
10
Collector Current, I
Tc=25°C
7
Single pulse
5
For PNP, minus sign is omitted
3
10
Collector-to-Emitter Voltage, V
14
12
-- W
10
C
8
6
4
Collector Dissipation, P
2
0
2006040 80 100 140120 160
2537 537
CE
P
-- Tc
C
Case Temperature, Tc -- °C
100
-- V
23
ITR08231
ITR08233
0.2
Collector Dissipation, P
0
2006040 80 100 140120 160
Ambient Temperature, Ta -- °C
ITR08232
No.5507-4/5
Page 5
2SA1875 / 2SC4976
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of May, 2001. Specifications and information herein are subject
to change without notice.
No.5507-5/5
PS
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