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INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistor 2SA1837
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
·High Current-Gain Bandwidth Product
·Complement to Type 2SC4793
APPLICATIONS
·Power amplifier applications.
·Driver stage amplifier applications
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER VALUE UNIT
(BR)CEO
= -230V(Min)
=25℃)
a
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
J
T
stg
Collector-Base Voltage -230 V
Collector-Emitter Voltage -230 V
Emitter-Base Voltage -5 V
Collector Current-Continuous -1 A
Base Current-Continuous -0.1 A
Collector Power Dissipation
@T
=25℃
a
Collector Power Dissipation
@TC=25℃
Junction Temperature 150 ℃
Storage Temperature -55~150 ℃
2
W
20
isc Website：www.iscsemi.cn
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INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistor 2SA1837
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CE
V
BE
I
CBO
I
EBO
h
C
(sat)
FE
OB
f
T
(on)
Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0 -230 V
Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA -1.5 V
Base-Emitter On Voltage IC= -500mA ; VCE= -5V -1.0 V
Collector Cutoff Current VCB= -230V ; IE=0 -1.0 μA
Emitter Cutoff Current VEB= -5V; IC=0 -1.0 μA
DC Current Gain IC= -100mA; VCE= -5V 100 320
Output Capacitance IE= 0; VCB= -10V; f= 1MHz 30 pF
Current-Gain—Bandwidth Product IC= -100mA ; VCE= -10V 70 MHz
isc Website：www.iscsemi.cn
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