Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1789
DESCRIPTION ·
·With TO-247 package
·Complement to type 2SC4653
·Low collector saturation voltage
APPLICATIONS
·For audio output applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Tc=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
V
V
P
CBO
CEO
EBO
I
C
C
T
j
Collector-base voltage Open emitter -60 V
Collector-emitter voltage Open base -60 V
Emitter-base voltage Open collector -5 V
Collector current -12 A
Collector power dissipation TC=25℃ 80 W
Junction temperature 150 ℃
℃)
T
stg
Storage temperature -55~150 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1789
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
Collector-emitter breakdown voltage IC=-25mA; IB=0 -60 V
Collector-base breakdown voltage IC=-1mA; IE=0 -60 V
Emitter-base breakdown voltage IE=-1mA; IC=0 -5 V
Collector-emitter saturation voltage IC=-6A;IB=-0.6 A -0.5 V
Base-emitter saturation voltage IC=-6A;IB=-0.6 A -2.0 V
Collector cut-off current VCB=-60V; IE=0 -10
Emitter cut-off current VEB=-5V; IC=0 -10
DC current gain IC=-2A ; VCE=-2V 60 320
h
classifications
FE
D E F
60-120 100-200 160-320
μA
μA
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1789
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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