Datasheet 2SA1774EB Datasheet (ROHM) [ru]

General Purpose Transistor (50V, 0.15A)

2SA1774EB

zApplications zDimensions (Unit : mm)
General purpose small signal amplifier.

zFeatures

1) Excellent h

FE linearity.

2) Complements the 2SC4617EB.

zStructure

PNP silicon epitaxial.
planar transistor.

zAbsolute maximum (Ta=25°C)

Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

Power dissipation
Junction temperature
Range of storage temperature

∗1 Pw=1ms Single pulse
∗2 Each terminal mounted on a recommended land

zElectrical characteristics (Ta=25°C)

Parameter Symbol

CEO

Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain

Transition frequency
Output capacitance

BV
BV
BV

I
I

V

CE(sat)

Cob

CBO

EBO

h

f

CBO

EBO

T

Symbol Limits Unit

CBO

V
V

CEO

V

EBO

C

∗1

I

CP

∗2

P

D

Tj

Tstg

Min.

Typ. Max. Unit Conditions

−50

−60

−6

FE

82

−

−

−

−

−

−

−

−

−100

−

−

−100

−

−

−0.5

−

560

−

140

−

4.0

−

5.0

EMT3F

(1) Base
(2) Emitter
(3) Collector

∗ = Denotes h

−60 V

−50

−6

−150I

−200

150
150

−55 to +150

C

=−1mA

VI
V

C

=−50µA

I

V

E

=−50µA

I
nA
nA

MHz

pF

CB

V

V

EB

=−6V

V

I

C/IB

CE

−

V

V

CE

V

CE

1.6

0.26
(3)

0.37

1.6

0.86

(1) (2)

0.37

0.5 0.5

1.0

Abbreviated symbol : F

FE

V
V

mA

mW

°C
°C

=−60V

=−50mA/−5mA
=−6V, IC=−1mA
=−12V, IE=2mA, f=100MHz
=−12V, IE=0A, f=1MHz

0.7

0.13

Each lead has same dimensions

∗

0.45

0.45

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2009 ROHM Co., Ltd. All rights reserved.

2009.03 - Rev.B

mA)

)

characteristics (I)

.0

)

5

)

500

0

DC CURRENT GAIN : h

500

0

DC CURRENT GAIN : h

I)

0

)

voltage vs. collector current (II)

0

0

1000

.

)

20

h

FE rank categories

Rank P Q R

h

FE

zElectrical characterristic curves

−50

−20

−10

−5

−2

−1

−0.5

COLLECTOR CURRENT : Ic (

−0.2

−0.1

−0.2

Fig.1 Grounded emitter propagation

FE

200

100

50

−0.2 −0.5 −1 −2 −5 −10 −20 −50 −10

Fig.4 DC current gain vs.

−1

V)

(

CE(sat)

−0.5

−0.2

−0.1

−0.05

−0.2 −0.5 −1 −2 −5 −10 −20 −50 −10

COLLECTOR SATURATION VOLTAGE : V

Fig.7 Collector-emitter saturation

82 to 180 120 to 270 180 to 390

Ta=100˚C

25˚C

−40˚C

−0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6

BASE TO EMITTER VOLTAGE : VBE (

characteristics

Ta=25˚C

COLLECTOR CURRENT : IC (

VCE= −5V

−3V

−1V

collector current (I)

Ta=100˚C

25˚C

−40˚C

COLLECTOR CURRENT : IC (

VCE= −6V

mA)

lC/lB=10

mA)

Data Sheet 2SA1774EB

S

270 to 560

−10

mA)

(

C

COLLECTOR CURRENT : I

V

FE

200

100

50

500

MHz)

(

T

200

100

TRANSITION FREQUENCY : f

Ta=25˚C

−8

−6

−4

−2

−0.4

−0.8 −1.6 −2

COLLECTOR TO MITTER VOLTAGE : VCE (

Fig.2 Grounded emitter output

Ta=100˚C

25˚C

−40˚C

−0.2 −0.5 −1 −2 −5 −10 −20 −50−10

COLLECTOR CURRENT : IC (

Fig.5 DC current gain vs.

collector current (II)

50

0.5 20

12 510

EMITTER CURRENT : I

Fig.8 Gain bandwidth product vs.

emitter current

−35.0

−31.5

−28.0

−24.5

−21.0

−17.5

−14.0

−10.5

−7.0

−3.5µA

I

B

−1.20

=0

VCE= −6V

mA)

Ta=25˚C

V

CE

= −12V

50 10

E

(

mA)

−100
Ta=25˚C

)

−500

mA

(

−450

−80

C

−400

−350

−300

−60

−40

−20

COLLECTOR CURRENT : I

0

V

COLLECTOR TO EMITTER VOLTAGE : VCE (

−250

−200

−150

−100

−50µA

−3 −4−2−1

IB=0

−

V

Fig.3 Grounded emitter output

V

(

CE(sat)

−0.5

−0.2

−0.1

−0.05

COLLECTOR SATURATION VOLTAGE : V

characteristics (II)

−1

IC/IB=

50

20
10

−0.2 −0.5 −1 −2 −5 −10 −20 −50 −10
COLLECTOR CURRENT : IC (

Ta=25˚C

mA)

Fig.6 Collector-emitter saturation

voltage vs. collector current (

pF)

pF)

10

5

2

−0.5 −20

−1 −2 −5 −10

COLLECTOR TO BASE VOLTAGE : VCB (V

COLLECTOR OUTPUT CAPACITANCE : Cob (

EMITTER INPUT CAPACITANCE : Cib (

EMITTER TO BASE VOLTAGE : VEB (V)

Cib

Cob

Ta=25˚C

f=1MHz

I

E

=0A

I

C

=0A

Fig.9 Collector output capacitance vs

collector-base voltage
Emitter inputcapacitance vs.
emitter-base voltage

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2009.03 - Rev.B

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