Datasheet 2SA1759 Datasheet (ROHM)

Transistors

1

High-voltage Switching Transistor

2SA1759

(Camera strobes and Telephone, Power supply) (−400V, −0.1A)

2SA1759

zFeatures

1) High breakdown voltage. (BV

CEO

= −400V)

2) Low saturation voltage, typically V

CE (sat)

= −0.2V at IC / IB = −20mA / −2mA.

3) High switching speed, typically tf = 1µs at Ic =100mA.

4) Wide SOA (safe operating area).

5) Complements the 2SC4505.

z

Absolute maximum ratings

Parameter Symbol Collector-base voltage Collector-emitter voltage Emitter-base voltage

Collector current

Collector power dissipation Junction temperature

Storage temperature

∗

1 Single pulse, Pw=100ms

∗

2 When mounted on a 40×40×0.7 mm ceramic board.

(T a=25°C)

CBO

V V

CEO

V

EBO

I

C

P

C

Tj

Tstg

Limits

−400

−7

−0.1

−0.2 A(Pulse)

0.5 2

150

−55 to +150

z

Electrical characteristics

Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Turn-on time Storage time Fall time

Parameter Symbol Min. Typ. Max. Unit Conditions

(T a=25°C)

BV

CBO

BV

CEO

BV

EBO

I

CBO

I

EBO

V

CE(sat)

V

BE(sat)

h

FE

f

T

Cob

t

on

t

stg

t

f

−

−400

−

−400

−

−7

−

−0.2

−

−−−1.5 V IC= −20mA, IB= −2mA

−

82

12

−

13

−

− 0.7 −µsIC= −100mA RL=1.5kΩ

− 1.8 −µsIB1= −IB2= −10mA

− 1 −µsVCC~ −150V

−10

−0.5

180

z

Dimensions

MPT3

(1)Base (2)Collector (3)Emitter

Unit

V V V

A(DC)

µA µA

MHz

pF

V V V

V

−

W

°C °C

I

C

= −50µA

I

C

= −1mA

I

E

= −50µA

V

CB

V

EB

I

C

= −20mA, IB= −2mA

V

CE CE

V V

CB

∗

2

−

(Unit : mm)

∗

= −400V = −6V

= −10V , IC= −10mA = −10V , IE=10mA , f=5MHz = −10V , IE=0A , f=1MHz

4.5

1.6

(3)(2)(1)

0.5

0.40.4

1.51.5

3.0

1.5

0.5

2.5

4.0

1.0

0.4

Rev.B 1/3

2SA1759

)

F

)

F

)

F

is

F

)

0

F

)

0

)

0

F)

)

e

)

F

nt

Transistors

z

Packaging specifications and hFE

Basic

∗

Denotes hFE

z

Electrical characteristics

−100

−80

(mA)

C

−60

−40

−20

COLLECTOR CURRENT : I

ig.1 Ground emitter output characteristics ( Ι

1000

500

200

EF

100

50

20 10

DC CURRENT GAIN : h

ig.4 DC current gain vs.collector current ( Ι

−10

(V

−5

CE(sat)

(V)

−2

BE(sat)

−1

−0.5

−0.2

−0.1

−0.05

−0.02

COLLECTOR SATURATION VOLTAGE :V

BASE SATURATION VOLTAGE :V

−0.01

ig.7 Collector-emitter saturation voltage

Base-emitter saturation voltage

Rev.B 2/3

Type 2SA1759

Package

h

FE

Marking

Code

ordering unit

(pieces)

MPT3

P

AH T100 3000

∗

(T a=25°C)

Ta=25

−3mA

−2.5mA

−1.5mA

−0.5mA

Ta=25

VCE=−10V

5V

−2mA

−1mA

IB=0

°C

CE

(V

°C

−3.5mA

−4mA

−4.5mA

−5mA

0

012345

COLLECTOR TO EMITTER VOLTAGE : V

5 2

1

−0.5 −1 −2 −5 −10 −20 −50 −100 −200 COLLECTOR CURRENT : IC (mA)

I

C

/

IB=10V

Ta=−25

°C

V

BE(sat)

100

25

Ta=100

25

0.5 1 2 5 10 20 50 100 200

COLLECTOR CURRENT : IC (mA)

°C

−25

V

CE(sat)

°C

vs. Collector curre

−100

Ta=25°C

−80

(mA)

C

−60

−40

−20

COLLECTOR CURRENT : I

0

COLLECTOR TO EMITTER VOLTAGE : V

−1mA

01020304050

−0.9mA

−0.8mA

−0.7mA

−0.6mA

−0.5mA

−0.4mA

−0.3mA

−0.2mA

IB=−0.1mA

CE

(V

ig.2 Ground emitter output characteristics ( ΙΙ

1000

500

200 100

50

20 10

5

DC CURRENT GAIN : hEF

2 1

−0.5 −1 −2 −5 −10 −20 −50 −100 −200

Ta=100

°C

COLLECTOR CURRENT : IC (mA)

−25

VCE=−10V

25°C

°C

ig.5 DC current gain vs.collector current ( ΙΙ

1000

500

(MHz)

T

200 100

50

20 10

5 2

TRANSITION FREQUENCY : f

1

0.5 1 2 5 10 20 50 100 20 EMITTER CURRENT : IE (mA)

Fig.8 Gain bandwidth products vs. emitter current

Ta=25

°C

VCE=−10V

−200

−100

(mA)

C

−50

−20

−10

−5

−2

COLLECTOR CURRENT : I

−1

−0.5

BASE TO EMITTER VOLTAGE : VBE (V)

°C

Ta=100

°C

25

−25

V

CE

=−5V

1.40.4 0.6 0.8 1.0 1.20.20

ig.3 Ground emitter propagation characterist

−10

(V

−5

CE(sat)

−2

−1

−0.5

−0.2

−0.1

−0.05

−0.02

−0.01

COLLECTOR SATURATION VOLTAGE : V

−0.5 −1 −2 −5 −10 −20 −50 −100 −20

Fig.6 Collector-emitter saturation voltage vs. collector current

1000

(p

ob

500

200 100

50

20 10

5 2

1

COLLECTOR OUTPUT CAPACITANCE : C

−0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −5 COLLECTOR TO BASE VOLTAGE : V

Fig.9 Collector output capacitanc vs. collector-base voltage

IC/IB=20

COLLECTOR CURRENT : IC (mA)

Ta=25

°C

10

Ta=25

°C

f=1MHz I

E

=0A

CB

(V

2SA1759

0 )

0

Transistors

−1000

−500

Ic Max. (Pulse∗)

−200

COLLECTOR CURRENT : IC (mA)

−100

−50

−20

−10

−5

−2

−1

DC

Ta=25

°C (When mounted on a 40×40× 0.7mm ceramic board)

∗Single nonrepetitive pulse

−1 −2 −5 −10 −20 −50

COLLECTOR TO EMITTER VOLTAGE : VCE (V

−100 −200 −500 −100

Fig.10 Safe operating area

R

L

=1.5kΩ

TUT

V

BB

Pw=10ms∗

100ms∗

VCC=−150V

100000

(°C/W)

th

10000

1000

100

10

1

0.1

TRANSIENT THERMAL RESISTANCE : R

0.001 0.01 0.1

Fig.11 Transient thermal resistance

Base current waveform

Collector current waveform

(1)When mounted on a 40×40×0.7mm ceramic board. (2)Unmounted

1 10 100 100

PULSE WIDTH : Pw (s)

10%

90%

ton tf

(2)

(1)

B2

I

B2

I

C

t

stg

Fig.12 Switching characteristics mesurement circuits

Rev.B 3/3

Appendix

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Notes

The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance.

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1