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INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistor 2SA1758
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
·DC Current Gain: hFE= 60(Min)@ (VCE= -2V, IC= -2A)
·Low Saturation Voltage: V
APPLICATIONS
·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER VALUE UNIT
= -60V(Min)
(BR)CEO
= -0.3V(Max)@ (IC= -6A, IB= -0.3A)
CE(sat)
B
=25℃)
a
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Collector-Base Voltage -100 V
Collector-Emitter Voltage -60 V
Emitter-Base Voltage -5 V
Collector Current-Continuous -12 A
Collector Power Dissipation
=25℃
@T
C
Junction Temperature 150 ℃
Storage Temperature -55~150 ℃
30 W
isc Website：www.iscsemi.cn
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INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistor 2SA1758
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CE
V
CE
V
BE
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
(sat)-
(sat)-
(sat)-
(sat)-
f
T
Collector-Emitter Breakdown Voltage IC= -1mA ; IB= 0 -60 V
Emitter-Base Breakdown Voltage IE= -50μA ; IC= 0 -5 V
Collector-Emitter Saturation Voltage IC= -6A; IB= -0.3A B -0.3 V
1
Collector-Emitter Saturation Voltage IC= -8A; IB= -0.4A B -0.5 V
2
Base-Emitter Saturation Voltage IC= -6A; IB= -0.3A B -1.2 V
1
Base-Emitter Saturation Voltage IC= -8A; IB= -0.4A B -1.5 V
2
Collector Cutoff Current VCB= -100V ; IE=0 -10 μA
Emitter Cutoff Current VEB= -5V; IC=0 -10 μA
DC Current Gain IC= -1A ; VCE= -2V 100
DC Current Gain IC= -2A ; VCE= -2V 60 320
Current-Gain—Bandwidth Product IC= -1A ; VCE= -10V 90 MHz
h
Classifications
FE-2
D E F
60-120 100-200 160-320
isc Website：www.iscsemi.cn
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