Page 1
Transistor
2SA1748
Silicon PNP epitaxial planer type
For high-frequency amplification
Complementary to 2SC4562
Features
■
●
High transition frequency fT.
●
Small collector output capacitance Cob.
●
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
–50
–50
–5
–50
150
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
2.1±0.1
1.25±0.1 0.4250.425
1
1.3±0.10.9±0.1
2.0±0.2
0.650.2 0.65
2
0.7±0.1
0.2±0.1
0 to 0.1
1:Base
2:Emitter EIAJ:SC–70
3:Collector S–Mini Type Package
Marking symbol : AL
3
Unit: mm
–0
+0.1
0.3
–0.05
+0.1
0.15
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
*
hFE Rank classification
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T
C
ob
Rank Q R
h
FE
200 ~ 400 250 ~ 500
Marking Symbol ALQ ALR
Conditions
VCB = –10V, IE = 0
VCE = –10V, IB = 0
IC = –10µA, IE = 0
IC = –1mA, IB = 0
IE = –10µA, IC = 0
VCE = –10V, IC = –2mA
IC = –10mA, IB = –1mA
VCB = –10V, IE = 2mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
min
–50
–50
–5
200
typ
– 0.1
250
1.5
max
– 0.1
–100
500
– 0.3
Unit
µA
µA
V
V
V
V
MHz
pF
1
Page 2
Transistor
2SA1748
PC—Ta IC—V
240
)
mW
200
(
C
160
120
80
40
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
V
CE(sat)—IC
)
–100
V
(
–30
CE(sat)
–10
–3
–1
IC/IB=10
CE
–120
–100
)
mA
(
–80
C
–60
–40
Collector current I
–20
0
0 –12–10–8–2 –6–4
)
Collector to emitter voltage VCE (V
hFE—I
600
FE
500
400
300
Ta=75˚C
25˚C
–25˚C
Ta=25˚C
IB=–300µA
–250µA
–200µA
–150µA
–100µA
–50µA
C
VCE=–10V
–60
–50
)
mA
(
–40
C
–30
–20
Collector current I
–10
)
600
)
500
MHz
(
T
400
300
0
IC—V
BE
VCE=–10V
25˚C
Ta=75˚C
0 –1.2–1.0– 0.8– 0.2 – 0.6– 0.4
–25˚C
Base to emitter voltage VBE (V
fT—I
E
VCB=–10V
Ta=25˚C
)
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
–1 –10 –100 –1000–3 –30 –300
6
)
pF
(
5
ob
4
3
2
1
Ta=75˚C
25˚C
–25˚C
Collector current IC (mA
Cob—V
CB
IE=0
f=1MHz
Ta=25˚C
)
Collector output capacitance C
0
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
200
100
Forward current transfer ratio h
0
– 0.1 –1 –10 –100– 0.3 –3 –30
Collector current IC (mA
)
200
100
Transition frequency f
0
0.1 1 10 1000.3 3 30
)
Emitter current IE (mA
)
2
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