Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1671
DESCRIPTION ·
·With TO-3PML package
·Complement to type 2SC4386
APPLICATIONS
·Audio and general purpose
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
I
C
I
B Base current -3 A
B
P
C
Collector-base voltage Open emitter -120 V
Collector-emitter voltage Open base -120 V
Emitter-base voltage Open collector -6 V
Collector current -8 A
Collector power dissipation
℃)
T
=25℃
C
75 W
T
j
T
stg
Junction temperature 150
Storage temperature -55~150
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1671
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CEsat
I
CBO
I
EBO
h
FE
f
T
Collector-emitter breakdown voltage IC=-50mA; IB=0 -120 V
Emitter-base breakdown voltage IE=-1mA; IC=0 -6 V
Collector-emitter saturation voltage IC=-3 A;IB=-0.3 A B -0.5 V
Collector cut-off current VCB=-120V; IE=0 -10 μA
Emitter cut-off current VEB=-6V; IC=0 -10 μA
DC current gain IC=-3A ; VCE=-4V 50 180
Transition frequency IC=-0.5A ; VCE=-12V 20 MHz
h
classifications
FE
O P Y
50-100 70-140 90-180
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1671
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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