Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1659 2SA1659A
DESCRIPTION
·With TO-220F package
·Complement to type 2SC4370/4370A
·High transition frequency f
APPLICATIONS
·High voltage applications
PINNING
PIN DESCRIPTION
T
1
Base
2 Collector
3 Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
I
C
I
B Base current -0.15 A
B
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage Open collector -5 V
Collector current -1.5 A
℃)
2SA1659 -160
2SA1659A
Open emitter
-180
V
2SA1659 -160
2SA1659A
Open base
-180
V
T
P
C
T
j
T
stg
Collector dissipation
Junction temperature 150
Storage temperature -55~150
=25℃
C
20 W
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1659 2SA1659A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
I
CBO
I
EBO
h
C
BE
FE
f
T
OB
Collector-emitter
breakdown voltage
Collector-emitter saturation voltage IC=-0.5A;IB=-50mA -1.5 V
Base-emitter on voltage IC=-0.5A ; VCE=-5V -1.0 V
Collector cut-off current VCB=-160V;IE=0 -1
Emitter cut-off current VEB=-5V; IC=0 -1
DC current gain IC=-0.1A ; VCE=-5V 70 240
Transition frequency IC=-0.1A ; VCE=-10V 100 MHz
Output capacitance IE=0 ; VCB=-10V;f=1MHz 30 pF
hFE classifications
2SA1659 -160
I
2SA1659A
=10mA ; IB=0 B
C
-180
V
μA
μA
O Y
70-140 120-240
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1659 2SA1659A
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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