Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1635
DESCRIPTION ·
·With TO-220Fa package
·Low collector saturation voltage
·Complement to type 2SC4008
APPLICATIONS
·For medium speed,electrical supply
and DC-DC converter applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Base
Emitter
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
V
V
P
T
CBO
CEO
EBO
I
C
C
j
Collector-base voltage Open emitter -80 V
Collector-emitter voltage Open base -80 V
Emitter-base voltage Open collector -5 V
Collector current -4 A
Collector power dissipation
Junction temperature 150
℃)
T
=25℃
C
30 W
℃
T
stg
Storage temperature -55~150
℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1635
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
V
I
I
C
h
Collector-emitter breakdown voltage IC=-1mA ,IB=0 B -80 V
Emitter-base breakdown voltage IE=-0.1mA ,IC=0 -5 V
CEsat
BE sat
CBO
EBO
h
FE
OB
f
T
Collector-emitter saturation voltage IC=-2A; IB=-0.2A -1.5 V
Base-emitter saturation voltage IC=-2A; IB=-0.2A -1.5 V
Collector cut-off current VCB=-80V; IE=0 -10
Emitter cut-off current VEB=-5V; IC=0 -10
DC current gain IC=-1A ; VCE=-4V 60 320
Output capacitance IE=0 ; VCB=-10V;f=1MHz 80 pF
Transition frequency IC=-0.5A ; VCE=-12V 12 MHz
Classifications
FE
μA
μA
D E F
60-120 100-200 160-320
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1635
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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