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INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistors 2SA1535/A
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
·Good Linearity of h
·Complement to Type 2SC3944/A
APPLICATIONS
·Designed for low-frequency driver and high power amplifi cation, is optimum for the driver-stage of a 60W to 100 W
output amplifier.
ABSOLUTE MAXIMUM RATINGS(T
= -150V(Min) -2SA1535
(BR)CEO
= -180V(Min) -2SA1535A
FE
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
2SA1535 -150
V
2SA1535A -180
2SA1535 -150
V
2SA1535A -180
15
W
2
V
V
V
P
CBO
CEO
EBO
I
C
I
C
C
Collector-Base
Voltage
Collector-Emitter
Voltage
Emitter-Base Voltage -5 V
Collector Current-Continuous -1 A
Collector Current-Peak -1.5 A
Collector Power Dissipation
=25℃
@ T
C
Collector Power Dissipation
@ T
=25℃
a
T
J
T
stg
Junction Temperature 150 ℃
Storage Temperature Range -55~150 ℃
isc Website：www.iscsemi.cn
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INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistors 2SA1535/A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
2SA1535 -150
V
(BR)CEO
Collector-Emitter
Breakdown Voltage
2SA1535A
I
= -50mA ; IB= 0
C
V
-180
V
(BR)EBO
V
CE
V
BE
I
CBO
h
h
C
(sat)
FE-1
FE-2
OB
f
T
(sat)
Emitter-Base Breakdown Voltage IE= -10μA ; IC= 0 -5 V
Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA B -2.0 V
Base-Emitter Saturation Voltage IC= -0.5A; IB= -50mA B -2.0 V
Collector Cutoff Current VCB= -150V ; IE= 0 -10 μA
DC Current Gain IC= -150mA ; VCE= -10V 90 330
DC Current Gain IC= -0.5A ; VCE= -5V 50
Output Capacitance
Current-Gain—Bandwidth Product
h
Classifications
FE-1
Q R S
I
= 0; VCB= -10V;f
E
I
= -50mA;VCE= -10V;f
C
= 1MHz
test
= 10MHz
test
30 pF
200 MHz
90-155 130-220 185-330
isc Website：www.iscsemi.cn
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