Page 1
INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistor 2SA1452
DESCRIPTION
·Low Collector Saturation Voltage : V
CE(sat)
·Good Linearity of h
·High Switching Speed
·Complement to Type 2SC3710
APPLICATIONS
·Designed for high current switching applications
ABSOLUTE MAXIMUM RATINGS(T
= -0.4V(Max)@IC= -6A
FE
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
P
CBO
CEO
EBO
I
C
I
B
C
T
J
Collector-Base Voltage -80 V
Collector-Emitter Voltage -80 V
Emitter-Base Voltage -6 V
Collector Current-Continuous -12 A
B Base Current-Continuous -2 A
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150 ℃
30 W
T
stg
Storage Temperature Range -55~150 ℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistor 2SA1452
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
I
V
(BR)CEO
Collector-Emitter Breakdown Voltage
= -50mA ; IB= 0
C
-80 V
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE-1
h
FE-2
C
OB
f
T
Collector-Emitter Saturation Voltage IC= -6A; IB= -0.3A B -0.4 V
Base-Emitter Saturation Voltage IC= -6A; IB= -0.3A B -1.2 V
Collector Cutoff Current VCB= -80V ; IE= 0 -10
Emitter Cutoff Current VEB= -6V ; IC= 0 -10
DC Current Gain IC= -1A ; VCE= -1V 70 240
DC Current Gain IC= -6A ; VCE= -1V 40
Output Capacitance
Current-Gain—Bandwidth Product IC= -1A; VCE= -5V 50 MHz
Switching Times
t
on
Turn-on Time 0.3
= 0; VCB= -10V;f
I
E
= 1MHz
test
μA
μA
400 pF
μs
I
= -6A ,IB1= -IB2= -0.3A,
t
stg
t
f
Storage Time 1.0
Fall Time
C
= -30V, RL= 5Ω
V
CC
0.5
h
Classifications
FE-1
O P
70-140 120-240
isc Website：www.iscsemi.cn
2
μs
μs
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