Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1443
DESCRIPTION ·
·With TO-220Fa package
·Low collector saturation voltage
·Fast switching speed
·High DC current gain
APPLICATIONS
·High speed power switching applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Base
Emitter
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B Base current -5 A
B
Collector-base voltage Open emitter -100 V
Collector-emitter voltage Open base -60 V
Emitter-base voltage Open collector -7 V
Collector current -10 A
Collector current-peak -20 A
℃)
TC=25℃
P
C
T
j
T
stg
Collector power dissipation
Ta=25℃
Junction temperature 150
Storage temperature -55~150
30
W
2
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1443
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat-1
V
CEsat-2
V
BEsat-1
V
BEsat-2
I
CBO
I
CEX
I
EBO
h
FE-1
h
FE-2
h
FE-3
C
Collector-emitter sustaining voltage IC=-6A , IB=-0.6A;L=1mH -60 V
Collector-emitter saturation voltage IC=-6A, IB=-0.3A -0.3 V
Collector-emitter saturation voltage IC=-8A, IB=-0.4A -0.5 V
Base-emitter saturation voltage IC=-6A, IB=-0.3A -1.2 V
Base-emitter saturation voltage IC=-8A, IB=-0.4A -1.5 V
Collector cut-off current VCB=-60V, IE=0 -10 μA
Collector cut-off current
=-60V,VBE=1.5V
CE
Ta=125℃
-10
-1.0
μA
mA
V
Emitter cut-off current VEB=-5V; IC=0 -10 μA
DC current gain IC=-1A ; VCE=-2V 100
DC current gain IC=-2A ; VCE=-2V 100 400
DC current gain IC=-6A ; VCE=-2V 60
ob
Output capacitance IE=0 ; VCB=-10V,f=1MHz 230 pF
f
T
Transition frequency IC=-1A ; VCE=-10V 80 MHz
Switching times
t
on
t
s
t
f
Turn-on time 0.3 μs
Storage time 1.5 μs
Fall time
h
Classifications
FE-2
M L K
100-200 150-300 200-400
IC=-6A ; RL=8.3Ω
=- IB2=-0.3A
I
B1
≈-50V
V
CC
0.3 μs
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1443
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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