Page 1
INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistor 2SA1328
DESCRIPTION
·Low Collector Saturation Voltage
:V
CE(sat)
·High Switching Speed
·Complement to Type 2SC3345
APPLICATIONS
·Designed for high current switching applications.
ABSOLUTE MAXIMUM RATINGS(T
= -0.4(V)(Max)@IC= -6A
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
P
T
CBO
CEO
EBO
I
C
I
B
T
stg
Collector-Base Voltage -60 V
Collector-Emitter Voltage -50 V
Emitter-Base Voltage -6 V
Collector Current-Continuous -12 A
B Base Current-Continuous -2 A
Total Power Dissipation
C
J
=25℃
@ T
C
Junction Temperature 150
Storage Temperature Range -55~150
40 W
℃
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistor 2SA1328
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CE
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
C
(sat)
(sat)
f
T
OB
Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 -50 V
Collector-Emitter Saturation Voltage IC= -6A; IB= -0.3A B -0.4 V
Base-Emitter Saturation Voltage IC= -6A; IB= -0.3A B -1.2 V
Collector Cutoff Current VCB= -60V ; IE= 0 -10 μA
Emitter Cutoff Current VEB= -6V; IC= 0 -10 μA
DC Current Gain IC= -1A ; VCE= -1V 70 240
DC Current Gain IC= -6A ; VCE= -1V 40
Current-Gain—Bandwidth Product IC= -1A ; VCE= -5V 70 MHz
Output Capacitance
Switching Times
t
on
Turn-on Time 0.3 μs
I
= 0; VCB= -10V; f
E
= 1MHz
test
320 pF
t
stg
t
f
Storage Time 1.0 μs
Fall Time
IC= -3A ,RL= 10Ω,
= -IB2= -0.15A,VCC= -30V
I
B1
0.5 μs
h
Classifications
FE-1
O Y
70-140 120-240
isc Website：www.iscsemi.cn
2
Loading...