Page 1
Transistor
2SA1309A
Silicon PNP epitaxial planer type
For low-frequency amplification
Complementary to 2SC3311A
Features
■
●
High foward current transfer ratio hFE.
●
Allowing supply with the radial taping.
●
Optimum for high-density mounting.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
*
h
FE
V
CE(sat)
f
T
C
ob
Ratings
–60
–50
–7
–200
–100
300
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
Conditions
VCB = –10V, IE = 0
VCE = –10V, IB = 0
IC = –10µA, IE = 0
IC = –2mA, IB = 0
IE = –10µA, IC = 0
VCE = –10V, IC = –2mA
IC = –50mA, IB = –5mA
VCB = –10V, IE = 1mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
4.0±0.2
3.0±0.215.6±0.5
marking
123
1:Emitter
2:Collector EIAJ:SC–72
3:Base New S Type Package
min
1.271.27
typ
0.1
+0.2
–
0.45
2.54±0.15
0.7±0.1
max
–100
–1
–60
–50
–7
160
460
– 0.3
80
3.5
Unit: mm
2.0±0.2
Unit
nA
µA
V
V
V
V
MHz
pF
*
hFE Rank classification
Rank Q R S
h
FE
160 ~ 260 210 ~ 340 290 ~ 460
1
Page 2
Transistor
2SA1309A
PC—Ta IC—V
500
)
450
mW
(
400
C
350
300
250
200
150
100
Collector power dissipation P
50
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
V
CE(sat)—IC
)
–10
V
(
–3
CE(sat)
–1
– 0.3
– 0.1
– 0.03
– 0.01
– 0.003
– 0.001
Collector to emitter saturation voltage V
–1 –10 –100 –1000–3 –30 –300
Ta=75˚C
25˚C
–25˚C
Collector current IC (mA
)
IC/IB=10
)
CE
120
100
)
mA
(
80
C
60
40
Collector current I
20
0
0 –12–10–8–2 –6–4
IB=–300µA
Collector to emitter voltage VCE (V
hFE—I
C
600
FE
500
400
Ta=75˚C
300
25˚C
–25˚C
200
100
Forward current transfer ratio h
0
–1 –10 –100 –1000–3 –30 –300
VCE=–5V
Collector current IC (mA
Ta=25˚C
–250µA
–200µA
–150µA
–100µA
–50µA
)
–240
–200
)
mA
(
–160
C
–120
–80
Collector current I
–40
0
0 –2.0–1.6– 0.4 –1.2– 0.8
)
Base to emitter voltage VBE (V
160
140
)
MHz
120
(
T
100
80
60
40
Transition frequency f
20
0
– 0.1 –1 –10 –100– 0.3 –3 –30
IC—V
BE
25˚C
VCB=–10V
Ta=25˚C
Ta=75˚C
fT—I
–25˚C
E
Emitter current IE (mA
VCE=–5V
)
)
Cob—V
10
)
9
pF
(
8
ob
7
6
5
4
3
2
1
Collector output capacitance C
0
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
2
CB
IE=0
f=1MHz
Ta=25˚C
)
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