Page 1
SILICON
:
PNP
EPITAXIAL
TYPE
(PCT PROCESS)
1
2SA130
2SA1306A
I2SA1306B
POWER AMPLIFIER
DRIVER
STAGE AMPLIFIER
APPLICATIONS.
APPLICATIONS.
FEATURES
High
.
. Complementary
MAXIMUM
Transition
RATINGS
Frequency
to
2SC3298, 2SC3298A,
:
(Ta=25°C)
ff=100MHz
CHARACTERISTIC SYMBOL RATING UNIT
2SA1306
Collector-Base
Voltage
2SA1306A
2SA1306B
2SA1306
Collector-Emitter
Voltage
2SA1306A
2SA1306B
Emitter-Base Voltage
Collector
Current
Base Current
Collector Power Dissipation
(Tc=25°C)
Junction Temperature
Storage Temperature Range T
VcBO
v
CEO
VeBO
ic
IB
PC
T
J
stg
(Typ.)
C3298B
2S
-55-150
-160
-180
-200
-160
-180
-200
-5
-1.5
-0.15
20 W
150
1
1.4
LftSS
0.76-0.15
2.5
+
4x0.2
1
V
d
V
V
A
JEDEC -
A
EIAJ
TOSHIBA
Weight :
°C
°C
10.3MAX.
#3.2±0.2
7.0
*l /
^"13
'A
1
1
1.2
i
2.5
5
"
!
1
OB
1 2
3\
1.
BASE
2. COLLECTOR
3. EMITTER
2 .
lg
Unit in i
S
-
4±a2 5
„ ^
CJ
.
_1
.
-
2-10L1A
Tim
w
:::
d
o
H
v
M
S
S
ELECTRICAL
Collector Cut-off Current
Emitter
CHARACTERISTICS (Ta=25
c)
CHARACTERISTIC SYMBOL
ICBO
Cut-off Current
lEBO
TEST CONDITION
=-160V, I
V
CB
=-5V, I
V
EB
=0
E
=0
C
2SA1306
Collector-Emitter
Breakdown
Voltage
V
(BR)
CEO
IC=-10mA,
Ib=0
2SA1306B
DC Current Gain
Collector-Emitter
Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output
Note :
ttiifiiiitittiiitiiiiiitiiiiiiiiiiiiiiii4tiiiitiiiiiiitiitiiiiiiiiiiiitiiiiiiiiittiiiiiiiiiiitittittitiiiiiatiiiiiiiiiiiiitiittiiiiiiiitiiiiiiiifiiiiiiiitiifiitiiirifiiifiiiiitfi(iiiititii(itiiiiiiiii»iMiiifiiiiiiiit
hFE
Capacitance
Classification
hFE
(Note)
v
CE(sat)
V
B
f
T
Cob
70-140,
E
Vce=-5V,
I
=-500mA,
c
VcE=-5V,
=-10V,
V
CE
V
=-10V,'
CB
=-100mA 70
I
c
lB=-50mA
I
=-500mA
c
Ic=-100mA
f=lMHz
lc=0,
120-240
-231-
MIN.
- -
-
-160
-180
-200
-
-
-
-
~VC^^sB»—
TYP.
-1.0
-
-1.0
- -
- -
- -
-
-
-1.5
-
-1.0
100
30
fla^^^iV.
CORPORATION
MAX.
240
-
-
UNIT
ft
A
nk
V2SA1306A
V
V
MHz
F
P
Page 2
1
5
2SA1
-1.0
-0.2
500
li,
x!
300
-a
306-2SA1
306A
VcE
-20
-10
A
-6
-4
I
=-2mA
B
-4 -6
-2
COLLECTOR-EMITTER VOLTAGE
=
10
:::=V
"AS
25
-25
003 -aoi
-ao3
COLLECTOR
COMMON EMITTER
-
=
V
10V
C
E
=
Tc
2
5°C
COLLECTOR CURRENT
hpE -
0°C
-ai
CURRENT
f
T
-8
IC
p=-5V
V
c
"~
-Q3
-
I
c
•
2SA1
COMMON
R
EMITTER
=
Tc
2
5"C
|
|
<2—
-10 -12 -14
V
(v)
CE
i
Pfn
S:
-V
'
'
.
*
\
-i
I
(A)
c
(mA)
306B
K
o
Eh
H
O
C5
w
<
o
o
o
>
IC -
o
J
I
"0
-02
^
-04 -Q6 -08 -1.0 -1.2
BASE-EMITTER
v
CE(sat)
COMMON
.
•
-0.5
-Q3
-aoo3 -a
EMITTER
IC/IE=10
oi -ace
COLLECTOR CURRENT
SAFE OPERATING
—
i
1
—
i i i
—i
'
I
c
I
c
(CONTINUOUS)
•&
SINGLE
PULSE To
•
CURVES
. LINEARLY
IN
V
CE0
•
V
CE0
-3
ii
MAX (PULSED)**
'
MAX
TEMPERATURE
' \
^>
%1
£
"I
""
%
V>
NONREPETITIVE
=
2
MUST BE
WITH
INCREASE
MAX =-160V
MAX
=-180V
-10 -30
5'C
COLLECTOR-EMITTER VOLTAGE
V
BE
/'
/,
'/
.
/
y
/
y
/
/ 1
'
'
VOLTAGE
-
IC
//
'"
Vl
-ai -a3
-
r
r
< /
^LlOOme*
,n\^^—
1
I
,
DERATED
2SA1306 "\
2SA1306A
EMITTER
VCE=-5V
V
BE
•O
j
25
-25
I
c
AREA
n
rrr
"IT
1
me
lOme^'
05s
\\
*
^
-100
(A)
*
L \Vl
\\!
V
CE
\
-1
(v)
1
-1.4
"CQ
to
N
>
O
O
-
1
'
.
11
I
^
g.
*
"^
>°
-300
(V)
TOSHIBA
CORPORATION
-232
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