Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1288
DESCRIPTION
·With TO-220 package
·Low collector saturation voltage
·Short switching time
APPLICATIONS
·Various inductance lamp drivers
for electrical equipment
·Inverters;converters
·Power amplification
·Switching regulator ,driver
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CM
C
Collector-base voltage Open emitter -80 V
Collector-emitter voltage Open base -60 V
Emitter-base voltage Open collector -5 V
Collector current -3 A
Collector current-Peak -5 A
Collector power dissipation
℃)
T
=25℃
C
30 W
T
j
T
stg
Junction temperature 150
Storage temperature -55~150
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1288
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
I
V
(BR)CEO
Collector-emitter breakdown voltage
=-1mA ,RBE=∞
C
-60 V
V
(BR)CBO
V
(BR)EBO
V
CEsat
I
CBO
I
EBO
h
f
FE
T
Collector-base breakdown voltage IC=-1mA; IE=0 -80 V
Emitter-base breakdown voltage IE=-1mA; IC=0 -5 V
Collector-emitter saturation voltage IC=-1.5A; IB=-75mA -0.4 V
Collector cut-off current VCB=-40V; IE=0 -100
Emitter cut-off current VEB=-4V; IC=0 -100
DC current gain IC=-0.5A ; VCE=-2V 70 280
Transition frequency IC=-0.5A ; VCE=-5V 100 MHz
h
Classifications
FE
Q R S
70-140 100-200 140-280
μA
μA
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1288
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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