Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1250
DESCRIPTION
·With TO-66 package
·Excellent safe operating area
·High breadown voltage
APPLICATIONS
·For general-purpose amplifier ;
and switching applications
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter -200 V
CBO
V
CEO
V
EBO
I
C
P
D
Collector-emitter voltage Open base -200 V
Emitter-base voltage Open collector -7 V
Collector current -8 A
Total power dissipation TC=25℃ 30 W
℃)
T
j
T
stg
Junction temperature 150 ℃
Storage temperature -55~150 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1250
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
Collector-emitter breakdown voltage IC=-10mA ;IB=0 -200 V
Emitter-base breakdown voltage IE=-1mA ;IC=0 -7 V
Collector-emitter saturation voltage IC=-5A; IB=-0.5A -1.5 V
Base-emitter saturation voltage IC=-5A; IB=-0.5A -2.0 V
Collector cut-off current VCB=200V; IE=0 -10
Emitter cut-off current VEB=-7V; IC=0 -10
μA
μA
DC current gain IC=-2A ; VCE=-1V 40 200
DC current gain IC=-5A ; VCE=-1V 20
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1250
PACKAGE OUTLINE
Fig.2 outline dimensions
3
Loading...