Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1232
DESCRIPTION
·With TO-3PFa package
·Complement to type 2SC3012
APPLICATIONS
·Audio frequency power amplifier.
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
V
V
I
CBO
CEO
EBO
I
C
CM
Collector-base voltage Open emitter -130 V
Collector-emitter voltage Open base -130 V
Emitter-base voltage Open collector -5 V
Collector current -10 A
Collector current-peak -15 A
P
C
T
j
T
stg
Collector power dissipation TC=25℃ 100 W
Junction temperature 150 ℃
Storage temperature -55~150 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1232
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
CEsat
BEsat
I
CBO
I
EBO
h
h
C
FE-1
FE-2
ob
f
T
Collector-emitter saturation voltage IC=-5A; IB=-0.5A -0.6 -1.5 V
Base-emitter saturation voltage IC=-5A; IB=-0.5A -1.3 -2.0 V
Collector cut-off current VCB=-130V; IE=0 -50 μA
Emitter cut-off current VEB=-3V; IC=0 -50 μA
DC current gain IC=-2A ; VCE=-5V 60 320
DC current gain IC=-5A ; VCE=-5V 40
Output capacitance IE=0 ; VCB=-10V;f=1MHz 250 pF
Transition frequency IC=-1A ; VCE=-5V 60 MHz
h
Classifications
FE-1
R Q P
60-120 100-200 160-320
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1232
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
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