Datasheet 2SA1193 Datasheet (HIT)

Application

High gain amplifier

Outline

TO-92MOD

2SA1193(K)

Silicon PNP Epitaxial, Darlington

2

3

1. Emitter

2. Collector

3. Base

1

3

2

1

2SA1193(K)

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current i
Collector power dissipation P

CBO

CEO

EBO

C

C(peak)

C

Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Collector to emitter breakdown
voltage

Collector cutoff current I
Emitter cutoff current I
DC current transfer ratio h
Collector to emitter saturation

voltage
Base to emitter saturation

voltage
Turn on time t
Turn off time t

Note: 1. Pulse test

V

(BR)CEO

CBO

EBO

FE

V

CE(sat)

V

BE(sat)

on

off

–60 — — V IC = –1 mA, RBE = ∞

— — –1.0 µAV
— — –1.0 µAV
2000 — — V
— — –1.5 V IC = –250 mA, IB = –0.5 mA*

— — –2.0 V

— 0.3 — µsI
— 0.9 — µsIB1 = –IB2 = –0.5 mA

–60 V
–60 V
–7 V
–0.5 A
–1.0 A

0.9 W

= –60 V, IE = 0

CB

= –7 V, IC = 0

EB

= –3 V, IC = –250 mA*

CE

= –250 mA

C

1

1

2

2SA1193(K)

Maximum Collector Dissipation Curve

0.9

(W)

C

0.6

0.3

Collector power dissipation P

0 50 150100

Ambient Temperature Ta (°C)

Typical Output Characteristics

–500

–100

–80

–400

(mA)

C

–300

–60

P

C

= 0.9W

–40

–200

Collector current I

–100

0 –2 –6 –10–4 –8

Collector to Emitter Voltage V

–20

–10

–5 µA

IB = 0

CE

(V)

Area of Safe Operation

–3

i

C (peak)

I

C max

(A)

C

–1.0

–0.3

–0.1

–0.03

Collector current I

–0.01

–0.003

–3 –30 –300–10 –100

Collector to Emiter Voltage V

DC Current Transfer Ratio vs.

100,000

FE

30,000

10,000

Ta = 75 °C

25 °C

3,000

1,000

300

DC Current transfer ratio h

VCE = –3 V
Pulse

100

–10 –30 –100 –1,000–300

Collector Current I

PW = 1 ms 1 shot

PW = 10 ms 1 shot

PW = 100 ms 1 shot

Ta = 25°C

(V)

CE

Collector Current

(mA)

C

3

2SA1193(K)

Saturation Voltage vs.

–10

(V)

(V)

CE(sat)

BE(sat)

–3

IC = 500 I
Pulse

Ta = 25°C

–1.0

–0.3

Base to emitter saturation voltage V

Collector to emitter saturation voltage V

–0.1

–10 –30 –300–100 –1,000

Collector Current

B

75°C

Collector Current I

V

V

CE(sat)

(mA)

C

BE(sat)

10

3

1.0

0.3

0.1

Switching time t (µs)

0.03

0.01
–10 –30

Switching Time vs. Collector Current

t

off

t

stg

t

on

t

d

IC = 500 I
Ta = 25°C

B

–100 –1,000–300

Collector Curret I

(mA)

C

<

tr, tf 10 ns

=

>

PW 10 µs

=

duty ratio 10 %

<

=

Switching Time Test Circuit

V

IN

V

IN

50

R

1

V

RB

6V

R

2

I

B1

I

B2

0.002 µ 0.002 µ

+–

50 µ 50 µ

D.U.T.

+–

I

C

Response Waveform

R

3

Input

–10 V

0

V

Output

CC

10%

90%
t

stg

10%

t

d

90%

t

on

10%

90%

t

off

4

Unit: mm

0.65 ± 0.1

0.75 Max

0.60 Max

0.5 ± 0.1

4.8 ± 0.3

0.7

8.0 ± 0.5

2.3 Max

10.1 Min

3.8 ± 0.3

0.5

1.27

2.54

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

TO-92 Mod
—
Conforms

0.35 g

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received the latest product standards or specifications before final design, purchase or use.

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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

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