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Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1184
DESCRIPTION ·
·With TO-126 package
·High breakdown voltage
APPLICATIONS
·Audio frequency power amplifier
·High frequency power amplifier
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
I
C
I
B Base current -0.1 A
B
P
D
Collector-base voltage Open emitter -120 V
Collector-emitter voltage Open base -120 V
Emitter-base voltage Open collector -5 V
Collector current -1 A
Total power dissipation
℃)
Ta=25℃ 1.5
=25℃ 15
T
C
W
T
j
T
stg
Junction temperature 150 ℃
Storage temperature -55～+150 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1184
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
I
CBO
I
EBO
h
f
FE
BE
T
Collector-emitter breakdown voltage IC=-10mA; IB=0 -120 V
Emitter-base breakdown voltage IE=-10μA; IC=0 -5 V
Collector-emitter saturation voltage IC=-500mA; IB=-50mA B -1.0 V
Base-emitter on voltage IC=-500mA ; VCE=-5V -1.0 V
Collector cut-off current VCB=-120V; IE=0 -1 μA
Emitter cut-off current VEB=-5V; IC=0 -1 μA
DC current gain IC=-100mA ; VCE=-5V 80 240
Transition frequency IC=-0.1A ; VCE=5V 120 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1184
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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