Page 1
SavantIC Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1169
ESCRIPTION
D
·With MT-200 package
·High power dissipation
APPLICATIONS
·Audio and general purpose applications
PINNING (see Fig.2)
PIN DESCRIPTION
1 Base
2
3 Emitter
Collector;connected to
mounting base
Fig.1 simplified outline (MT-200) and symbol
Absolute maximum ratings(Ta=25)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter -200 V
CBO
V
Collector-emitter voltage Open base -200 V
CEO
V
Emitter-base voltage Open collector -6 V
EBO
I
C
I
B
P
C
Collector current -15 A
Base current -5 A
Collector power dissipation TC=25 150 W
T
j
T
stg
Junction temperature 150
Storage temperature -55~150
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SavantIC Semiconductor Product Specification
breakdown voltage
Silicon PNP Power Transistors 2SA1169
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
V
Collector-emitter breakdown voltage IC=-25mA ; IB=0 -200 V
(BR)CEO
Collector-base
(BR)CBO
Emitter-base breakdown voltage IE=-1mA ; IC=0 -6 V
(BR)EBO
V
Collector-emitter saturation voltage IC=-5A ;IB=-0.5A -2.0 V
CEsat
V
Base-emitter saturation voltage IC=-5A ;IB=-0.5A -2.5 V
BEsat
I
Collector cut-off current VCB=-200V; IE=0 -10 µA
CBO
I
Emitter cut-off current VEB=-6V; IC=0 -10 µA
EBO
h
DC current gain IC=-5A ; VCE=-4V 50
FE
f
T
Transition frequency IC=-1A ; VCE=-10V 20 MHz
IC=-1mA ; IE=0 -200 V
2
Page 3
SavantIC Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1169
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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