Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1166
DESCRIPTION
·With MT-200 package
·High power dissipation
APPLICATIONS
·Audio and general purpose applications
PINNING (see Fig.2)
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (MT-200) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
I
C
I
B Base current -5 A
B
Collector-base voltage Open emitter -150 V
Collector-emitter voltage Open base -150 V
Emitter-base voltage Open collector -6 V
Collector current -15 A
℃)
T
P
C
T
j
T
stg
Collector power dissipation
Junction temperature 150
Storage temperature -55~150
=25℃
C
150 W
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1166
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
f
Collector-emitter breakdown voltage IC=-25mA ; IB=0 B -150 V
Collector-base breakdown voltage IC=-1mA ; IE=0 -150 V
Emitter-base breakdown voltage IE=-1mA ; IC=0 -6 V
Collector-emitter saturation voltage IC=-5A ;IB=-0.5A B -2.0 V
Base-emitter saturation voltage IC=-5A ;IB=-0.5A B -2.5 V
Collector cut-off current VCB=-150V; IE=0 -10 μA
Emitter cut-off current VEB=-6V; IC=0 -10 μA
DC current gain IC=-5A ; VCE=-4V 50
T
Transition frequency IC=-1A ; VCE=-10V 60 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1166
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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