Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1146
DESCRIPTION
·With TO-3P(I) package
·High power dissipations
APPLICATIONS
·For audio and general purpose
amplifier applications
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3P(I)) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
I
C
I
B Base current -2 A
B
P
T
Collector-base voltage Open emitter -140 V
Collector-emitter voltage Open base -140 V
Emitter-base voltage Open collector -5 V
Collector current -10 A
Total power dissipation TC=25℃ 100 W
℃)
T
j
T
stg
Junction temperature 150 ℃
Storage temperature -55~150 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1146
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CEsat
I
CBO
I
EBO
h
h
FE-1
FE-2
f
T
Collector-emitter breakdown voltage IC=-25mA ,IB=0 -140 V
Emitter-base breakdown voltage IE=-1mA ,IC=0 -5 V
Collector-emitter saturation voltage IC=-5A; IB=-0.5A -2.0 V
Collector cut-off current VCB=-140V; IE=0 -10 μA
Emitter cut-off current VEB=-5V; IC=0 -10 μA
DC current gain IC=-1A ; VCE=-5V 55 160
DC current gain IC=-4A ; VCE=-5V 35
Transition frequency IC=-0.5A ; VCE=-10V 70 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1146
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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