Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1120
DESCRIPTION ·
·With TO-126 package
·High transition frequency
·Low collector saturation voltage
APPLICATIONS
·Audio power amplifier applications
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
V
V
P
CBO
CEO
EBO
I
C
I
B
D
Collector-base voltage Open emitter -35 V
Collector-emitter voltage Open base -35 V
Emitter-base voltage Open collector -6 V
Collector current -5 A
Base current -1 A
Total power dissipation
℃)
Ta=25℃
=25℃
T
C
1.5
W
5
T
j
T
stg
Junction temperature 150
Storage temperature
℃
-55～+150 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1120
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
I
CBO
I
EBO
h
h
C
BE
FE-1
FE-2
ob
f
T
Collector-emitter breakdown voltage IC=-10mA ;IB=0 -35 V
Collector-emitter saturation voltage IC=-4A; IB=-0.1A -1.0 V
Base-emitter on voltage IC=-4A ; VCE=-2V -1.5 V
Collector cut-off current VCB=-35V; IE=0 -0.1 mA
Emitter cut-off current VEB=-6V; IC=0 -0.1 mA
DC current gain IC=-500mA ; VCE=-2V 200
DC current gain IC=-4A ; VCE=-2V 70
Output capacitance IE=0 ; VCB=-10V f=1MHz 62 pF
Transition frequency IC=-500mA ; VCE=-2V 170 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1120
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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