Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1109
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·High transition frequency
APPLICATIONS
·For audio frequency amplifier and high
power amplifier applications
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
I
I
CM
P
C
C
Collector-base voltage Open emitter -180 V
Collector-emitter voltage Open base -180 V
Emitter-base voltage Open collector -5 V
Collector current -10 A
Collector current-peak -14 A
Collector power dissipation TC=25℃ 200 W
℃)
T
j
T
stg
Junction temperature 150 ℃
Storage temperature -65~150 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1109
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
I
CBO
I
EBO
h
FE-1
h
FE-2
Collector-emitter breakdown voltage IC=-25mA ;IB=0 -180 V
Collector-emitter saturation voltage IC=-5A ;IB=-0.5A B -2.0 V
BE
Base-emitter on voltage IC=-5A;VCE=-5V -1.5 V
Collector cut-off current VCB=-180V; IE=0 -0.1 mA
Emitter cut-off current VEB=-5V; IC=0 -0.1 mA
DC current gain IC=-2A ; VCE=-5V 50 160
DC current gain IC=-5A ; VCE=-5V 30
f
T
Transition frequency IC=-0.5A ; VCE=-5V 60 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1109
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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