Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1108
DESCRIPTION
·With MT-200 package
·High power dissipation
APPLICATIONS
·For power amplifier applications
PINNING(see Fig.2)
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (MT-200) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
I
C
I
B Base current -1.2 A
B
P
C
Collector-base voltage Open emitter -130 V
Collector-emitter voltage Open base -130 V
Emitter-base voltage Open collector -5 V
Collector current -12 A
Collector power dissipation TC=25℃ 120 W
℃)
T
j
T
stg
Junction temperature 150 ℃
Storage temperature -55~150 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1108
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
(BR)CEO
(BR)EBO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
Collector-emitter breakdown voltage IC=-25mA ; IB=0 B -130 V
Emitter-base breakdown voltage IE=-1mA ; IC=0 -5 V
Collector-emitter saturation voltage IC=-5A ;IB=-0.5A B -2.0 V
Base-emitter on voltage IC=-5A ; VCE=-5V -2.0 V
Collector cut-off current VCB=-130V; IE=0 -5 μA
Emitter cut-off current VEB=-5V; IC=0 -5 μA
DC current gain IC=-2A ; VCE=-5V 55 160
DC current gain IC=-5A ; VCE=-5V 35
Transition frequency IC=-1A ; VCE=-10V 60 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1108
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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